Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping

Xinming Huang, Kehui Wu, Mingwei Chen, Taishi Toshinori, Keigo Hoshikawa, Shinji Koh, Satoshi Uda

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Raman backscattering measurements were carried out on Si crystals heavily doped with B and/or Ge over the temperature range from 123 to 573 K. It was found that the frequency of the q≈0 optical phonon in the Si crystals decreased almost linearly with increasing temperature, and the temperature coefficient depended on the B concentration. On the other hand, the change in frequency with temperature was relatively insensitive to Ge doping in comparison with B doping. However, heavy B and Ge codoping in Si resulted in a relatively larger temperature coefficient than B doping with the same B concentration.

Original languageEnglish
Pages (from-to)257-260
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume9
Issue number1-3
DOIs
Publication statusPublished - 2006 Feb

Keywords

  • Heavy B and Ge codoping
  • Raman spectroscopy
  • Si crystal

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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