TY - JOUR
T1 - Temperature dependence of Peierls-Hubbard phase transition in [Pd(cptn)2Br]Br2 studied by scanning tunneling microscopy
AU - Hosomi, Yuka
AU - Yoshida, Shoji
AU - Taninaka, Atsushi
AU - Yoshida, Takefumi
AU - Takaishi, Shinya
AU - Takeuchi, Osamu
AU - Yamashita, Masahiro
AU - Shigekawa, Hidemi
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/8
Y1 - 2016/8
N2 - The temperature dependence of the Peierls-Hubbard phase transition in [Pd(cptn)2Br]Br2 (cptn: 1R,2R-diaminocyclopentane) was directly observed using a low- Temperature scanning tunneling microscope. A short ligand without alkyl chains was used to form a rigid crystal lattice to reduce the effect of structural changes in the crystal with temperature. The hysteresis in the temperature dependence of the ratio between the areas of the charge density wave (CDW) state produced by the PdII-PdIV mixed-valence state and the Mott-Hubbard (MH) state with a PdIIIaveraged valence state which is a characteristic of the first-order phase transition, was directly observed at the atomic scale. Pinning of the CDW phase by defects was observed below the critical temperature, suggesting the growth of the CDW phase with defects as nuclei.
AB - The temperature dependence of the Peierls-Hubbard phase transition in [Pd(cptn)2Br]Br2 (cptn: 1R,2R-diaminocyclopentane) was directly observed using a low- Temperature scanning tunneling microscope. A short ligand without alkyl chains was used to form a rigid crystal lattice to reduce the effect of structural changes in the crystal with temperature. The hysteresis in the temperature dependence of the ratio between the areas of the charge density wave (CDW) state produced by the PdII-PdIV mixed-valence state and the Mott-Hubbard (MH) state with a PdIIIaveraged valence state which is a characteristic of the first-order phase transition, was directly observed at the atomic scale. Pinning of the CDW phase by defects was observed below the critical temperature, suggesting the growth of the CDW phase with defects as nuclei.
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U2 - 10.7567/JJAP.55.08NB16
DO - 10.7567/JJAP.55.08NB16
M3 - Article
AN - SCOPUS:84983739070
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
M1 - 08NB16
ER -