Temperature dependence of oxidation-induced changes of work function on Si(001)2 × 1 surface studied by real-time ultraviolet photoelectron spectroscopy

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Abstract

At the initial stage of oxidation on a Si(001)2 × 1 surface, real-time ultraviolet photoelectron spectroscopy revealed that the O 2 dosage dependences of band bending and work function due to a surface dipole layer show a distinct change with increasing temperature from 300 to 600°C in a Langmuir-type adsorption region, while oxygen uptake curves are almost the same at all temperatures examined. In constant to a dual-oxide-species (DOS) model in which the surface migration of adsorbed oxygen is not considered for Langmuir-type adsorption, the observed changes in work function due to the surface dipole layer mean that adsorbed oxygen can migrate on the surface more frequently with increasing temperature, leading to a decrease in the number of adsorbed oxygen atoms bonded at dimer backbond centers and furthermore a significant structural change of the oxide layer.

Original languageEnglish
Pages (from-to)L1048-L1051
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number33-36
DOIs
Publication statusPublished - 2005 Aug 26

Keywords

  • Band bending
  • Diffusion
  • Layer-by-layer oxidation
  • Oxygen adsorption
  • Rate-limiting reaction
  • Real-time monitoring
  • Si surface
  • UPS
  • Work function

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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