TY - JOUR
T1 - Temperature dependence of internal quantum efficiency of radiation for the near-band-edge emission of GaN crystals quantified by omnidirectional photoluminescence spectroscopy
AU - Kojima, Kazunobu
AU - Ikemura, Kenichiro
AU - Chichibu, Shigefusa F.
N1 - Funding Information:
The authors thank Dr. K. Fujito and Dr. H. Ikeda, Mitsubishi Chemical Corporation, for sample preparation. The authors also thank Mr. T. Saito, Tohoku university, and Mr. A. Nakamura, Hamamatsu Photonics K. K., for their helps to build the temperature variable ODPL system. This work was partly supported by Five-Star Alliance, the Canon Foundation, and JSPS KAKENHI (Grant Number: JP16H06427).
Publisher Copyright:
© 2020 The Japan Society of Applied Physics
PY - 2020/10/1
Y1 - 2020/10/1
N2 - Internal quantum efficiency of radiation (IQE) for the near-band-edge (NBE) emission of freestanding-GaN crystals was observed by omnidirectional photoluminescence spectroscopy at various temperatures between 12 K and 300 K. A photoluminescence quenching ratio (Rq), defined by a spectrally integrated NBE emission obtained at 300 K to that obtained at 12 K, showed a lower value (2%) comparing with the IQE value (5.5%) for the GaN with the free electron concentration of 1 × 1017 cm−3 under cw photo-pumping density of 13 W cm−2. This difference arises from the nonlinear relationship between IQE and the external quantum efficiency owing to the photon recycling effect.
AB - Internal quantum efficiency of radiation (IQE) for the near-band-edge (NBE) emission of freestanding-GaN crystals was observed by omnidirectional photoluminescence spectroscopy at various temperatures between 12 K and 300 K. A photoluminescence quenching ratio (Rq), defined by a spectrally integrated NBE emission obtained at 300 K to that obtained at 12 K, showed a lower value (2%) comparing with the IQE value (5.5%) for the GaN with the free electron concentration of 1 × 1017 cm−3 under cw photo-pumping density of 13 W cm−2. This difference arises from the nonlinear relationship between IQE and the external quantum efficiency owing to the photon recycling effect.
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U2 - 10.35848/1882-0786/abb788
DO - 10.35848/1882-0786/abb788
M3 - Article
AN - SCOPUS:85092729232
VL - 13
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 10
M1 - 105504
ER -