Temperature dependence of internal quantum efficiency of radiation for the near-band-edge emission of GaN crystals quantified by omnidirectional photoluminescence spectroscopy

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2 Citations (Scopus)

Abstract

Internal quantum efficiency of radiation (IQE) for the near-band-edge (NBE) emission of freestanding-GaN crystals was observed by omnidirectional photoluminescence spectroscopy at various temperatures between 12 K and 300 K. A photoluminescence quenching ratio (Rq), defined by a spectrally integrated NBE emission obtained at 300 K to that obtained at 12 K, showed a lower value (2%) comparing with the IQE value (5.5%) for the GaN with the free electron concentration of 1 × 1017 cm−3 under cw photo-pumping density of 13 W cm−2. This difference arises from the nonlinear relationship between IQE and the external quantum efficiency owing to the photon recycling effect.

Original languageEnglish
Article number105504
JournalApplied Physics Express
Volume13
Issue number10
DOIs
Publication statusPublished - 2020 Oct 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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