Temperature dependence of frequency response characteristics in organic field-effect transistors

Xubing Lu; Takeo Minari; Chuan Liu; Akichika Kumatani; J. M. Liu; Kazuhito Tsukagoshi

doi:10.1063/1.4711211

Temperature dependence of frequency response characteristics in organic field-effect transistors

Xubing Lu, Takeo Minari, Chuan Liu, Akichika Kumatani, J. M. Liu, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator- semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

Original language	English
Article number	183308
Journal	Applied Physics Letters
Volume	100
Issue number	18
DOIs	https://doi.org/10.1063/1.4711211
Publication status	Published - 2012 Apr 30
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4711211

Cite this

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title = "Temperature dependence of frequency response characteristics in organic field-effect transistors",

abstract = "The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator- semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.",

author = "Xubing Lu and Takeo Minari and Chuan Liu and Akichika Kumatani and Liu, {J. M.} and Kazuhito Tsukagoshi",

note = "Funding Information: The authors would like to thank Dr. T. Miyadera (JST-PREST) for valuable discussions. This study was partially supported by a Grant for Advanced Industrial Technology Development (No. 11B11016d) from the New Energy and Industrial Technology Development Organization (NEDO), Japan. It was also supported in part by a Grant-in-Aid for Scientific Research (No. 218505) from the Ministry of Education, Culture, Sport, Science, and Technology of Japan.",

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T1 - Temperature dependence of frequency response characteristics in organic field-effect transistors

AU - Lu, Xubing

AU - Minari, Takeo

AU - Liu, Chuan

AU - Kumatani, Akichika

AU - Liu, J. M.

AU - Tsukagoshi, Kazuhito

N1 - Funding Information: The authors would like to thank Dr. T. Miyadera (JST-PREST) for valuable discussions. This study was partially supported by a Grant for Advanced Industrial Technology Development (No. 11B11016d) from the New Energy and Industrial Technology Development Organization (NEDO), Japan. It was also supported in part by a Grant-in-Aid for Scientific Research (No. 218505) from the Ministry of Education, Culture, Sport, Science, and Technology of Japan.

PY - 2012/4/30

Y1 - 2012/4/30

N2 - The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator- semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

AB - The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator- semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

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Temperature dependence of frequency response characteristics in organic field-effect transistors

Abstract

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