Temperature dependence of frequency response characteristics in organic field-effect transistors

Xubing Lu; Takeo Minari; Chuan Liu; Akichika Kumatani; J. M. Liu; Kazuhito Tsukagoshi

doi:10.1063/1.4711211

Temperature dependence of frequency response characteristics in organic field-effect transistors

Xubing Lu, Takeo Minari, Chuan Liu, Akichika Kumatani, J. M. Liu, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator- semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

Original language	English
Article number	183308
Journal	Applied Physics Letters
Volume	100
Issue number	18
DOIs	https://doi.org/10.1063/1.4711211
Publication status	Published - 2012 Apr 30
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Minari, Takeo

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AU - Kumatani, Akichika

AU - Liu, J. M.

AU - Tsukagoshi, Kazuhito

PY - 2012/4/30

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AB - The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator- semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

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