Magnetic Tunnel Junctions (MTJs) were fabricated on thermally oxidized Si(100) wafers by utilizing DC magnetron sputtering. Magnetic properties of MTJs with structure of Ta(50)/Cu(100)/Ta(50)/Ni80Fe20(20)/ Cu(50)/Mn75Ir25(100)/Co70Fe30(25)/ AlOx(15)/Co70Fe30(25)/Ni80Fe 20(t)/Ta(50), where t = 0, 100 and 100 Å, were investigated by using SQUID, XRD and MR analyzer. Exchange bias field is inversely proportional to temperature for t = 0 Å sample. XRD shows the improvement of (111) texture of IrMn3 and Cu after annealing. The exchange bias field decreases with increasing temperature due to thermal effect. And it is the highest for t = 100 Å due to increased crystallites size of IrMn 3. For the free layer, the temperature dependence of interlayer exchange coupling involves the same mechanism as that of exchange bias.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics