Temperature dependence of electron and hole mobilities in heavily impurity-doped SiGe single crystals

I. Yonenaga, W. J. Li, T. Akashi, T. Ayuzawa, T. Goto

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13 Citations (Scopus)

Abstract

Heavily impurity-doped single crystals of Six Ge1-x alloy with the composition 0.84<x<1 and large-grained polycrystals with x=0.80 were grown by the Czochralski technique. The Hall-coefficient measurements of the electron and hole mobilities in the grown crystals were carried out in the temperature range of 300-1000 K and compared with those in undoped SiGe. The Hall mobilities of electrons and holes in SiGe with a carrier concentration of 1019 - 1020 cm-3 both show a Tn, n∼1, temperature dependence up to elevated temperatures. This indicates that the carrier transport process is mainly rate controlled by charged impurity scattering. In single-crystal SiGe free from grain-boundary effects, the hole mobility increases with decreasing Si content at least up to 0.84 and the electron mobility is greater than in Si and polycrystalline SiGe. These results suggest that scattering processes in alloy semiconductors are more complicated than previously thought.

Original languageEnglish
Article number063702
JournalJournal of Applied Physics
Volume98
Issue number6
DOIs
Publication statusPublished - 2005 Sep 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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