TY - JOUR
T1 - Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions
AU - Arata, I.
AU - Ohno, Y.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Funding Information:
This work was partly supported by “Research for the Future Program” from the Japan Society for Promotion of Science (JSPS-RFTF 97P00202).
PY - 2001/5
Y1 - 2001/5
N2 - We investigated the temperature dependence of the electroluminescence and I-V characteristics of hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes, which is used for spin-injection experiments reported earlier. The observed temperature dependence is found to be reproduced by a reference sample of non-magnetic p-GaAs/(In,Ga)As/n-GaAs with an undoped (Al,Ga)As spacer layer. This suggests the existence of potential barrier at the (Ga,Mn)As/GaAs interface.
AB - We investigated the temperature dependence of the electroluminescence and I-V characteristics of hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes, which is used for spin-injection experiments reported earlier. The observed temperature dependence is found to be reproduced by a reference sample of non-magnetic p-GaAs/(In,Ga)As/n-GaAs with an undoped (Al,Ga)As spacer layer. This suggests the existence of potential barrier at the (Ga,Mn)As/GaAs interface.
KW - Ferromagnetic semiconductors
KW - Pn junction
KW - Potential barrier
KW - Spin
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U2 - 10.1016/S1386-9477(01)00101-1
DO - 10.1016/S1386-9477(01)00101-1
M3 - Article
AN - SCOPUS:0035335120
VL - 10
SP - 288
EP - 291
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-3
ER -