Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions

I. Arata, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We investigated the temperature dependence of the electroluminescence and I-V characteristics of hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes, which is used for spin-injection experiments reported earlier. The observed temperature dependence is found to be reproduced by a reference sample of non-magnetic p-GaAs/(In,Ga)As/n-GaAs with an undoped (Al,Ga)As spacer layer. This suggests the existence of potential barrier at the (Ga,Mn)As/GaAs interface.

Original languageEnglish
Pages (from-to)288-291
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume10
Issue number1-3
DOIs
Publication statusPublished - 2001 May 1

Keywords

  • Ferromagnetic semiconductors
  • Pn junction
  • Potential barrier
  • Spin

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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