Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions

I. Arata; Y. Ohno; F. Matsukura; H. Ohno

doi:10.1016/S1386-9477(01)00101-1

Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions

I. Arata, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We investigated the temperature dependence of the electroluminescence and I-V characteristics of hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes, which is used for spin-injection experiments reported earlier. The observed temperature dependence is found to be reproduced by a reference sample of non-magnetic p-GaAs/(In,Ga)As/n-GaAs with an undoped (Al,Ga)As spacer layer. This suggests the existence of potential barrier at the (Ga,Mn)As/GaAs interface.

Original language	English
Pages (from-to)	288-291
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	10
Issue number	1-3
DOIs	https://doi.org/10.1016/S1386-9477(01)00101-1
Publication status	Published - 2001 May 1

Keywords

Ferromagnetic semiconductors
Pn junction
Potential barrier
Spin

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions",

abstract = "We investigated the temperature dependence of the electroluminescence and I-V characteristics of hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes, which is used for spin-injection experiments reported earlier. The observed temperature dependence is found to be reproduced by a reference sample of non-magnetic p-GaAs/(In,Ga)As/n-GaAs with an undoped (Al,Ga)As spacer layer. This suggests the existence of potential barrier at the (Ga,Mn)As/GaAs interface.",

keywords = "Ferromagnetic semiconductors, Pn junction, Potential barrier, Spin",

author = "I. Arata and Y. Ohno and F. Matsukura and H. Ohno",

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T1 - Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions

AU - Arata, I.

AU - Ohno, Y.

AU - Matsukura, F.

AU - Ohno, H.

PY - 2001/5/1

Y1 - 2001/5/1

N2 - We investigated the temperature dependence of the electroluminescence and I-V characteristics of hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes, which is used for spin-injection experiments reported earlier. The observed temperature dependence is found to be reproduced by a reference sample of non-magnetic p-GaAs/(In,Ga)As/n-GaAs with an undoped (Al,Ga)As spacer layer. This suggests the existence of potential barrier at the (Ga,Mn)As/GaAs interface.

AB - We investigated the temperature dependence of the electroluminescence and I-V characteristics of hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes, which is used for spin-injection experiments reported earlier. The observed temperature dependence is found to be reproduced by a reference sample of non-magnetic p-GaAs/(In,Ga)As/n-GaAs with an undoped (Al,Ga)As spacer layer. This suggests the existence of potential barrier at the (Ga,Mn)As/GaAs interface.

KW - Ferromagnetic semiconductors

KW - Pn junction

KW - Potential barrier

KW - Spin

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EP - 291

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

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