Abstract
We investigated the temperature dependence of the electroluminescence and I-V characteristics of hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes, which is used for spin-injection experiments reported earlier. The observed temperature dependence is found to be reproduced by a reference sample of non-magnetic p-GaAs/(In,Ga)As/n-GaAs with an undoped (Al,Ga)As spacer layer. This suggests the existence of potential barrier at the (Ga,Mn)As/GaAs interface.
Original language | English |
---|---|
Pages (from-to) | 288-291 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 10 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2001 May 1 |
Keywords
- Ferromagnetic semiconductors
- Pn junction
- Potential barrier
- Spin
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics