Temperature dependence of dielectric functions in Yb2O3 and Lu2O3 epitaxial thin films on sapphire (0001)

Takayuki Makino; Takaho Asai; Tomoya Takeuchi; Kenichi Kaminaga; Daichi Oka; Tomoteru Fukumura

doi:10.7567/1347-4065/ab4a88

Temperature dependence of dielectric functions in Yb₂O₃ and Lu₂O₃ epitaxial thin films on sapphire (0001)

Takayuki Makino, Takaho Asai, Tomoya Takeuchi, Kenichi Kaminaga, Daichi Oka, Tomoteru Fukumura

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The fundamental band-gaps of Yb₂O₃ and Lu₂O₃ films on sapphire (0001) substrates grown by pulsed laser deposition have been measured by optical transmission and reflectance spectroscopies as a function of temperature. The temperature dependence of the band-gap was analyzed by a model based on phonon dispersion effects and could be explained in terms of phonon-related parameters such as the optical phonon temperature. The phonon dispersion in Yb₂O₃ was found to fall into material trend based on the data for a large variety of element and binary semiconductors.

Original language	English
Article number	SCCB13
Journal	Japanese journal of applied physics
Volume	59
Issue number	SC
DOIs	https://doi.org/10.7567/1347-4065/ab4a88
Publication status	Published - 2020 Feb 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{159ece1cbdb94146a7d503d4512b1922,

title = "Temperature dependence of dielectric functions in Yb2O3 and Lu2O3 epitaxial thin films on sapphire (0001)",

abstract = "The fundamental band-gaps of Yb2O3 and Lu2O3 films on sapphire (0001) substrates grown by pulsed laser deposition have been measured by optical transmission and reflectance spectroscopies as a function of temperature. The temperature dependence of the band-gap was analyzed by a model based on phonon dispersion effects and could be explained in terms of phonon-related parameters such as the optical phonon temperature. The phonon dispersion in Yb2O3 was found to fall into material trend based on the data for a large variety of element and binary semiconductors.",

author = "Takayuki Makino and Takaho Asai and Tomoya Takeuchi and Kenichi Kaminaga and Daichi Oka and Tomoteru Fukumura",

year = "2020",

month = feb,

day = "1",

doi = "10.7567/1347-4065/ab4a88",

language = "English",

volume = "59",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "SC",

}

TY - JOUR

T1 - Temperature dependence of dielectric functions in Yb2O3 and Lu2O3 epitaxial thin films on sapphire (0001)

AU - Makino, Takayuki

AU - Asai, Takaho

AU - Takeuchi, Tomoya

AU - Kaminaga, Kenichi

AU - Oka, Daichi

AU - Fukumura, Tomoteru

PY - 2020/2/1

Y1 - 2020/2/1

N2 - The fundamental band-gaps of Yb2O3 and Lu2O3 films on sapphire (0001) substrates grown by pulsed laser deposition have been measured by optical transmission and reflectance spectroscopies as a function of temperature. The temperature dependence of the band-gap was analyzed by a model based on phonon dispersion effects and could be explained in terms of phonon-related parameters such as the optical phonon temperature. The phonon dispersion in Yb2O3 was found to fall into material trend based on the data for a large variety of element and binary semiconductors.

AB - The fundamental band-gaps of Yb2O3 and Lu2O3 films on sapphire (0001) substrates grown by pulsed laser deposition have been measured by optical transmission and reflectance spectroscopies as a function of temperature. The temperature dependence of the band-gap was analyzed by a model based on phonon dispersion effects and could be explained in terms of phonon-related parameters such as the optical phonon temperature. The phonon dispersion in Yb2O3 was found to fall into material trend based on the data for a large variety of element and binary semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=85081956962&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85081956962&partnerID=8YFLogxK

U2 - 10.7567/1347-4065/ab4a88

DO - 10.7567/1347-4065/ab4a88

M3 - Article

AN - SCOPUS:85081956962

VL - 59

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - SC

M1 - SCCB13

ER -

Temperature dependence of dielectric functions in Yb₂O₃ and Lu₂O₃ epitaxial thin films on sapphire (0001)

Abstract

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