TY - JOUR
T1 - Temperature dependence of dielectric functions in Yb2O3 and Lu2O3 epitaxial thin films on sapphire (0001)
AU - Makino, Takayuki
AU - Asai, Takaho
AU - Takeuchi, Tomoya
AU - Kaminaga, Kenichi
AU - Oka, Daichi
AU - Fukumura, Tomoteru
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2020/2/1
Y1 - 2020/2/1
N2 - The fundamental band-gaps of Yb2O3 and Lu2O3 films on sapphire (0001) substrates grown by pulsed laser deposition have been measured by optical transmission and reflectance spectroscopies as a function of temperature. The temperature dependence of the band-gap was analyzed by a model based on phonon dispersion effects and could be explained in terms of phonon-related parameters such as the optical phonon temperature. The phonon dispersion in Yb2O3 was found to fall into material trend based on the data for a large variety of element and binary semiconductors.
AB - The fundamental band-gaps of Yb2O3 and Lu2O3 films on sapphire (0001) substrates grown by pulsed laser deposition have been measured by optical transmission and reflectance spectroscopies as a function of temperature. The temperature dependence of the band-gap was analyzed by a model based on phonon dispersion effects and could be explained in terms of phonon-related parameters such as the optical phonon temperature. The phonon dispersion in Yb2O3 was found to fall into material trend based on the data for a large variety of element and binary semiconductors.
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U2 - 10.7567/1347-4065/ab4a88
DO - 10.7567/1347-4065/ab4a88
M3 - Article
AN - SCOPUS:85081956962
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SC
M1 - SCCB13
ER -