Temperature dependence of dielectric functions in Yb2O3 and Lu2O3 epitaxial thin films on sapphire (0001)

Takayuki Makino, Takaho Asai, Tomoya Takeuchi, Kenichi Kaminaga, Daichi Oka, Tomoteru Fukumura

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1 Citation (Scopus)


The fundamental band-gaps of Yb2O3 and Lu2O3 films on sapphire (0001) substrates grown by pulsed laser deposition have been measured by optical transmission and reflectance spectroscopies as a function of temperature. The temperature dependence of the band-gap was analyzed by a model based on phonon dispersion effects and could be explained in terms of phonon-related parameters such as the optical phonon temperature. The phonon dispersion in Yb2O3 was found to fall into material trend based on the data for a large variety of element and binary semiconductors.

Original languageEnglish
Article numberSCCB13
JournalJapanese journal of applied physics
Issue numberSC
Publication statusPublished - 2020 Feb 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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