Abstract
The fundamental band-gaps of Yb2O3 and Lu2O3 films on sapphire (0001) substrates grown by pulsed laser deposition have been measured by optical transmission and reflectance spectroscopies as a function of temperature. The temperature dependence of the band-gap was analyzed by a model based on phonon dispersion effects and could be explained in terms of phonon-related parameters such as the optical phonon temperature. The phonon dispersion in Yb2O3 was found to fall into material trend based on the data for a large variety of element and binary semiconductors.
| Original language | English |
|---|---|
| Article number | SCCB13 |
| Journal | Japanese journal of applied physics |
| Volume | 59 |
| Issue number | SC |
| DOIs | |
| Publication status | Published - 2020 Feb 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Makino, T., Asai, T., Takeuchi, T., Kaminaga, K., Oka, D., & Fukumura, T. (2020). Temperature dependence of dielectric functions in Yb2O3 and Lu2O3 epitaxial thin films on sapphire (0001). Japanese journal of applied physics, 59(SC), [SCCB13]. https://doi.org/10.7567/1347-4065/ab4a88