Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides

Koji Eriguchi, Masaaki Niwa

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Temperature and stress polarity-dependent dielectric breakdown in thin silicon dioxides has been carefully investigated. The experimental data show that the time to breakdown under a constant-current injection has two kinks around 330 and 230 K for 4- and 10-nm-thick oxides under both stress polarities. It has been found that thinner oxides have a stronger temperature dependence (a larger activation energy) even if the field dependence of the activation energy is taken into consideration, and also that, from the gate voltage shift during the constant-current injection, the postbreakdown characteristics strongly depends on the stress polarity for thinner oxides.

Original languageEnglish
Pages (from-to)1985-1987
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number14
DOIs
Publication statusPublished - 1998 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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