It is shown that the resistance of three-dimensional metallic n InSb below 100 mK can be explained by the effects of the anomalous correction due to Coulomb interactions. A clear comparison of the experiment with the theory is made possible by resistance measurements over a wide range of the carrier concentration. The theoretical results show better agreement with the experimental ones in metallic n-InSb than those in metallic Si-P.
ASJC Scopus subject areas
- Condensed Matter Physics