Temperature and bias voltage dependencies of spin injection signals for Co 2FeAl 0.5Si 0.5/n-GaAs schottky tunnel junction

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We investigated the temperature and bias voltage dependencies of spin injection signals for Co 2FeAl 0.5Si 0.5 (CFAS)/n-GaAs schottky tunnel junction. Clear voltage change was observed at 10K for the junction by 3 Terminal Hanle measurements. The maximum voltage change, ΔV MAX, was decreased with increasing temperature and observed up to 100 K. The estimated spin relaxation time, τ, was 290 ps at 10K and was also decreased with increasing temperature. In addition, temperature dependency of τ was lower than that of ΔV MAX. The ΔV MAX was increased with increasing bias voltage, and the sign of ΔV MAX was reversed by opposite bias voltage direction. Moreover, bias dependency of ΔV MAX became insensitive with increasing temperature.

Original languageEnglish
Pages (from-to)641-644
Number of pages4
JournalMaterials Transactions
Volume53
Issue number4
DOIs
Publication statusPublished - 2012

Keywords

  • Full-Heusler alloy
  • Spin injection

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Temperature and bias voltage dependencies of spin injection signals for Co <sub>2</sub>FeAl <sub>0.5</sub>Si <sub>0.5</sub>/n-GaAs schottky tunnel junction'. Together they form a unique fingerprint.

Cite this