Temperature and bias voltage dependence of tunnel magnetoresistance effect in magnetic tunnel junctions with Co2Fe(Al,Si) electrodes fabricated by MBE

N. Tezuka; T. Saito; Keiko Kikuchi; A. Sasaki; F. Mitsuhashi; N. Ikeda; S. Sugimoto; T. Takenaga

doi:10.1088/1742-6596/200/5/052028

Temperature and bias voltage dependence of tunnel magnetoresistance effect in magnetic tunnel junctions with Co₂Fe(Al,Si) electrodes fabricated by MBE

N. Tezuka, T. Saito, Keiko Kikuchi, A. Sasaki, F. Mitsuhashi, N. Ikeda, S. Sugimoto, T. Takenaga

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The temperature and bias voltage dependence of tunnel magnetoresistance ratio of two types of magnetic tunnel junctions were investigated. These two types of junctions have almost the same ordered structured Co ₂FeAl_0.5Si_0.5 Heusler bottom electrodes and different barrier layers of Al oxide or MgO, and top electrodes. A similar temperature dependence of tunnel magnetoresistance ratio measured at low bias voltage was found. A larger asymmetric bias voltage dependence of the tunnel magnetoresistance was obtained for the junction with Al oxide barrier compared with the junction with MgO barrier, and negative tunnel magnetoresistance ratio was also observed for both junctions.

Original language	English
Article number	052028
Journal	Journal of Physics: Conference Series
Volume	200
Issue number	SECTION 5
DOIs	https://doi.org/10.1088/1742-6596/200/5/052028
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy(all)

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Tezuka, N., Saito, T., Kikuchi, K., Sasaki, A., Mitsuhashi, F., Ikeda, N., Sugimoto, S., & Takenaga, T. (2010). Temperature and bias voltage dependence of tunnel magnetoresistance effect in magnetic tunnel junctions with Co₂Fe(Al,Si) electrodes fabricated by MBE. Journal of Physics: Conference Series, 200(SECTION 5), [052028]. https://doi.org/10.1088/1742-6596/200/5/052028

Tezuka, N, Saito, T, Kikuchi, K, Sasaki, A, Mitsuhashi, F, Ikeda, N, Sugimoto, S & Takenaga, T 2010, 'Temperature and bias voltage dependence of tunnel magnetoresistance effect in magnetic tunnel junctions with Co₂Fe(Al,Si) electrodes fabricated by MBE', Journal of Physics: Conference Series, vol. 200, no. SECTION 5, 052028. https://doi.org/10.1088/1742-6596/200/5/052028

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title = "Temperature and bias voltage dependence of tunnel magnetoresistance effect in magnetic tunnel junctions with Co2Fe(Al,Si) electrodes fabricated by MBE",

abstract = "The temperature and bias voltage dependence of tunnel magnetoresistance ratio of two types of magnetic tunnel junctions were investigated. These two types of junctions have almost the same ordered structured Co 2FeAl0.5Si0.5 Heusler bottom electrodes and different barrier layers of Al oxide or MgO, and top electrodes. A similar temperature dependence of tunnel magnetoresistance ratio measured at low bias voltage was found. A larger asymmetric bias voltage dependence of the tunnel magnetoresistance was obtained for the junction with Al oxide barrier compared with the junction with MgO barrier, and negative tunnel magnetoresistance ratio was also observed for both junctions.",

author = "N. Tezuka and T. Saito and Keiko Kikuchi and A. Sasaki and F. Mitsuhashi and N. Ikeda and S. Sugimoto and T. Takenaga",

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T1 - Temperature and bias voltage dependence of tunnel magnetoresistance effect in magnetic tunnel junctions with Co2Fe(Al,Si) electrodes fabricated by MBE

AU - Tezuka, N.

AU - Saito, T.

AU - Kikuchi, Keiko

AU - Sasaki, A.

AU - Mitsuhashi, F.

AU - Ikeda, N.

AU - Sugimoto, S.

AU - Takenaga, T.

PY - 2010

Y1 - 2010

N2 - The temperature and bias voltage dependence of tunnel magnetoresistance ratio of two types of magnetic tunnel junctions were investigated. These two types of junctions have almost the same ordered structured Co 2FeAl0.5Si0.5 Heusler bottom electrodes and different barrier layers of Al oxide or MgO, and top electrodes. A similar temperature dependence of tunnel magnetoresistance ratio measured at low bias voltage was found. A larger asymmetric bias voltage dependence of the tunnel magnetoresistance was obtained for the junction with Al oxide barrier compared with the junction with MgO barrier, and negative tunnel magnetoresistance ratio was also observed for both junctions.

AB - The temperature and bias voltage dependence of tunnel magnetoresistance ratio of two types of magnetic tunnel junctions were investigated. These two types of junctions have almost the same ordered structured Co 2FeAl0.5Si0.5 Heusler bottom electrodes and different barrier layers of Al oxide or MgO, and top electrodes. A similar temperature dependence of tunnel magnetoresistance ratio measured at low bias voltage was found. A larger asymmetric bias voltage dependence of the tunnel magnetoresistance was obtained for the junction with Al oxide barrier compared with the junction with MgO barrier, and negative tunnel magnetoresistance ratio was also observed for both junctions.

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Temperature and bias voltage dependence of tunnel magnetoresistance effect in magnetic tunnel junctions with Co₂Fe(Al,Si) electrodes fabricated by MBE

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