Temperature and bias-assisted transport properties of LSMO/AlO/CoFeB magnetic tunnel junction

Syed Rizwan, S. M. Guo, Y. Wang, Z. C. Wen, S. Zhang, Y. G. Zhao, J. Zou, X. F. Han

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We have observed the transport properties in magnetic tunnel junction with the multilayered structure: La0.67Sr0.33MnO3 (50 nm)/Al-O (1 nm)/CoFeB (5 nm)/Ta (10 nm)/Ru (10 nm). The maximum normal tunneling magnetoresistance (TMR) ratio was found to be 12.4% at a temperature range around 100 K, and the maximum inverse TMR ratio was observed to be ∼3% at a temperature of 5 K. The inverse TMR decreases with increasing temperature until it reaches a temperature range of around 50 K, whereby it switches to the normal TMR behavior. The appearance of inverse TMR at low temperatures is attributed to the presence of minority-spin density of states (DOS) of half-metal La0.67Sr0.33MnO3 around the Fermi level present at the half-metal-insulator interface. The vanishing of inverse TMR and increase of normal TMR above certain temperature range is due to no contribution from the minority-spin DOS in the tunneling process. These results were found to be reproducible and the TMR ratio of more than 3% and 11% was obtained at room temperature before and after annealing at a temperature of 235 K for an annealing time of one hour, respectively.

Original languageEnglish
Article number5467617
Pages (from-to)2383-2386
Number of pages4
JournalIEEE Transactions on Magnetics
Issue number6
Publication statusPublished - 2010 Jun
Externally publishedYes


  • Half-metal LSMO
  • Inverse tunneling magnetoresistance (TMR)
  • Magnetic tunnel junction (MTJ)
  • Minority-spin density of states (DOS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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