TEM study for self orientated LaNiO3 film along [100]

Naonori Sakamoto, Kotaro Ozawa, Kohei Murakoshi, Tomoya Ohno, Takanori Kiguchi, Takeshi Matsuda, Toyohiko Konno, Naoki Wakiya, Hisao Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution


LaNiO3 (LNO) is known as a candidate for oxide electrodes with perovskite type crystal structure which is suitable for lattice matching with conventional perovskite ferroelectrics, Pb(Zr,Ti)O3 (PZT), BaTiO 3 (BTO), etc. We have been investigating thermal expansion effects of the LNO film with PZT/LNO/Si and BTO/LNO/Si structures, where ferroelectric and piezoelectric properties are enhanced by a compressive thermals stress impressed from the LNO layer to the ferrelectric films. The ferroelectric films also shows high [001] orientation owing to [100] orientation of the LNO film. In the present study, further investigation of the LNO films prepared on Si substrates by CSD method is made by transmission electron microscopy (TEM) in order to understand self-orientation along [100] perpendicular to the film plane which effectively leads orientation of PZT films prepared on the LNO film. The results obviously indicates that the 1 layer deposited LNO film has almost no orientation, whereas it shows tendency of orientation of [100] perpendicular to the film plane when the layer number increased.

Original languageEnglish
Title of host publicationElectroceramics in Japan XVI
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9783037858561
Publication statusPublished - 2014
Event32nd Electronics Division Meeting of the Ceramic Society of Japan - Tokyo, Japan
Duration: 2012 Oct 262012 Oct 27

Publication series

NameKey Engineering Materials
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795


Other32nd Electronics Division Meeting of the Ceramic Society of Japan


  • Electrode
  • Film
  • Orientation
  • Perovskite
  • Stress
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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