TEM observations of Gd2Zr2O7 films formed by the ion-beam-assisted deposition method on an Ni-based alloy

T. Kato, Y. Iijima, T. Muroga, T. Saitoh, T. Hirayama, I. Hirabayashi, Y. Yamada, T. Izumi, Y. Shiohara, Y. Ikuhara

    Research output: Contribution to journalConference article

    27 Citations (Scopus)


    Gd2Zr2O7 films were formed by the ion-beam-assisted deposition (IBAD) method on an Ni-based alloy. Cross-sectional and plan-view specimens of the films were prepared for transmission electron microscopy investigation and microstructural characterization. The thicknesses of the Gd2Zr2O 7 films were less than 1.3 μm. During initial formation of the films, tiny grains nucleated close to the Ni-based alloy, followed by gradual formation of a columnar texture composed of fine 〈0 0 1〉 aligned grains perpendicular to the Ni-based alloy interface. However, dark-field image taken under g = (440) indicated that the in-plane mosaic spread of the columnar texture did not improve as much as the [0 0 1] tilt angle. However, examination of the Gd2Zr2O7 film surfaces revealed that the interfaces between columns were not well defined. Furthermore, a CeO2 film deposited on a 1.3 μm thick Gd2Zr2O7 film by the pulsed laser deposition (PLD) method contained less in-plane mosaic spread than the Gd 2Zr2O7 film alone. PLD-CeO 2/IBAD-Gd2Zr2O7 films are therefore considered promising candidates for use as buffer layers in superconductor tapes.

    Original languageEnglish
    Pages (from-to)790-795
    Number of pages6
    JournalPhysica C: Superconductivity and its applications
    Issue numberPART 2
    Publication statusPublished - 2003 Oct 1
    EventProceedings of the 15th International Symposium on Superconduc - Yokohama, Japan
    Duration: 2002 Nov 112002 Nov 13


    • FIB
    • GdZrO
    • IBAD
    • PLD-CeO
    • TEM

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering

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