TEM microstructure analysis for compressively stressed Pb(Zr,Ti)O 3 thin films by CSD-derived LaNiO3 bottom electrodes

Kotaro Ozawa, Masaaki Ishizuka, Naonori Sakamoto, Tomoya Ohno, Takanori Kiguchi, Takeshi Matsuda, Toyohiko Konno, Naoki Wakiya, Hisao Suzuki

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Pb(Zr,Ti)O3 (PZT) possesses superior ferroelectric and piezoelectric properties arisen near a morphotropic phase boundary (MPB) composition, PbZr0.53Ti0.47O3. We have prepared a PZT (MPB composition) thin film and perovskite-type LaNiO3 (LNO) electrodes on Si substrate by chemical solution deposition (CSD) method. The CSD-derived LNO bottom electrode applied compressive stress to the PZT film and enhanced the ferroelectric properties of the PZT film. TEM and SAED revealed that stress distribution and microstructures of the PZT/LNO/Si films effectively influenced the ferroelectric properties.

Original languageEnglish
Article number1260016
JournalFunctional Materials Letters
Volume5
Issue number2
DOIs
Publication statusPublished - 2012 Jun 1

Keywords

  • CSD
  • PZT
  • TEM
  • stress
  • thin film

ASJC Scopus subject areas

  • Materials Science(all)

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