TY - GEN
T1 - TEM analysis of planar defects in InGaAsN and GaAs grown on Ge (001) by MOVPE
AU - Wanarattikan, Pornsiri
AU - Sanorpim, Sakuntam
AU - Denchitcharoen, Somyod
AU - Yordsri, Visittapong
AU - Thanachayanont, Chanchana
AU - Uesugi, Kenjiro
AU - Kuboya, Shigeyuki
AU - Onabe, Kentaro
N1 - Publisher Copyright:
© 2016 Trans Tech Publications, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2016
Y1 - 2016
N2 - InGaAsN on Ge (001) is proposed to be a part of the InGaP(N)/InGaAs/InGaAsN/Ge four-junction solar cell to increase a conversion efficiency over 40%. In this work, InGaAsN latticematched film and GaAs buffer layer grown on Ge (001) substrate by metal organic vapor phase epitaxy (MOVPE) were examined by transmission electron microscopy (TEM). Electron diffraction pattern of InGaAsN taken along the [110]-zone axis illustrates single diffracted spots, which represent a layer with a uniformity of alloy composition. Cross-sectional bright field TEM image showed line contrasts generated at the GaAs/Ge interface and propagated to the InGaAsN layer. Dark field TEM images of the same area showed the presence of boundary-like planar defects lying parallel to the growth direction in the InGaAsN film and GaAs buffer layer but not in the Ge substrate. TEM images with the (002) and (00-2) reflections and the four visible {111} planes reflections illustrated planar defects which are expected to attribute to antiphase boundaries (APBs). Moreover, the results observed from atomic force microscopy (AFM) and field emission electron microscopy (FE-SEM) demonstrated the surface morphology of InGaAsN film with submicronsized domains, which is a characteristic of the APBs.
AB - InGaAsN on Ge (001) is proposed to be a part of the InGaP(N)/InGaAs/InGaAsN/Ge four-junction solar cell to increase a conversion efficiency over 40%. In this work, InGaAsN latticematched film and GaAs buffer layer grown on Ge (001) substrate by metal organic vapor phase epitaxy (MOVPE) were examined by transmission electron microscopy (TEM). Electron diffraction pattern of InGaAsN taken along the [110]-zone axis illustrates single diffracted spots, which represent a layer with a uniformity of alloy composition. Cross-sectional bright field TEM image showed line contrasts generated at the GaAs/Ge interface and propagated to the InGaAsN layer. Dark field TEM images of the same area showed the presence of boundary-like planar defects lying parallel to the growth direction in the InGaAsN film and GaAs buffer layer but not in the Ge substrate. TEM images with the (002) and (00-2) reflections and the four visible {111} planes reflections illustrated planar defects which are expected to attribute to antiphase boundaries (APBs). Moreover, the results observed from atomic force microscopy (AFM) and field emission electron microscopy (FE-SEM) demonstrated the surface morphology of InGaAsN film with submicronsized domains, which is a characteristic of the APBs.
KW - III-v-nitrides
KW - MOVPE
KW - Solar cells
KW - Transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=84958211536&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84958211536&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.675-676.639
DO - 10.4028/www.scientific.net/KEM.675-676.639
M3 - Conference contribution
AN - SCOPUS:84958211536
SN - 9783038356837
T3 - Key Engineering Materials
SP - 639
EP - 642
BT - Applied Physics and Material Applications II
A2 - Mekhum, Witthaya
A2 - Thapinta, Anat
A2 - Attaphut, Prungsak
A2 - Sangwaranatee, Narong
A2 - Limsuwan, Pichet
A2 - Kim, Hong Joo
A2 - Djamal, Mitra
A2 - Kaewkhao, Jakrapong
A2 - Kaewkhao, Jakrapong
PB - Trans Tech Publications Ltd
T2 - 2nd International Conference on Applied Physics and Material Applications, ICAPMA 2015
Y2 - 28 May 2015 through 30 May 2015
ER -