TEM analysis of planar defects in InGaAsN and GaAs grown on Ge (001) by MOVPE

Pornsiri Wanarattikan, Sakuntam Sanorpim, Somyod Denchitcharoen, Visittapong Yordsri, Chanchana Thanachayanont, Kenjiro Uesugi, Shigeyuki Kuboya, Kentaro Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaAsN on Ge (001) is proposed to be a part of the InGaP(N)/InGaAs/InGaAsN/Ge four-junction solar cell to increase a conversion efficiency over 40%. In this work, InGaAsN latticematched film and GaAs buffer layer grown on Ge (001) substrate by metal organic vapor phase epitaxy (MOVPE) were examined by transmission electron microscopy (TEM). Electron diffraction pattern of InGaAsN taken along the [110]-zone axis illustrates single diffracted spots, which represent a layer with a uniformity of alloy composition. Cross-sectional bright field TEM image showed line contrasts generated at the GaAs/Ge interface and propagated to the InGaAsN layer. Dark field TEM images of the same area showed the presence of boundary-like planar defects lying parallel to the growth direction in the InGaAsN film and GaAs buffer layer but not in the Ge substrate. TEM images with the (002) and (00-2) reflections and the four visible {111} planes reflections illustrated planar defects which are expected to attribute to antiphase boundaries (APBs). Moreover, the results observed from atomic force microscopy (AFM) and field emission electron microscopy (FE-SEM) demonstrated the surface morphology of InGaAsN film with submicronsized domains, which is a characteristic of the APBs.

Original languageEnglish
Title of host publicationApplied Physics and Material Applications II
EditorsWitthaya Mekhum, Anat Thapinta, Prungsak Attaphut, Narong Sangwaranatee, Pichet Limsuwan, Hong Joo Kim, Mitra Djamal, Jakrapong Kaewkhao, Jakrapong Kaewkhao
PublisherTrans Tech Publications Ltd
Pages639-642
Number of pages4
ISBN (Print)9783038356837
DOIs
Publication statusPublished - 2016
Event2nd International Conference on Applied Physics and Material Applications, ICAPMA 2015 - Pattaya, Thailand
Duration: 2015 May 282015 May 30

Publication series

NameKey Engineering Materials
Volume675-676
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Other

Other2nd International Conference on Applied Physics and Material Applications, ICAPMA 2015
CountryThailand
CityPattaya
Period15/5/2815/5/30

Keywords

  • III-v-nitrides
  • MOVPE
  • Solar cells
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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