Technology of ferroelectric thin-film formation with large coercive field on amorphous SiO2 by ion-bombardment-assisted sputtering and oxygen radical treatment for future scaling down of ferroelectric gate field-effect transistor memory device

Ichirou Takahashi, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi

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3 Citations (Scopus)

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