Abstract
Thermodeposition (TDS) and Rutherford backscattering (RBS) spectrometries were performed for Ar implanted to Si. TDS was measured with varying the implantation dose (1×10 13 -10 17 /cm 2 ) and the implantation energies (20-60keV). TDS measurements showed that Ar ions are released from specimens in two steps between 800 and 1100K revealing that the implanted Ar ions are in two different states in Si. Temperatures of these steps were measured as functions of the implantation dose and the energy to conclude that a solute Ar ion is released between 800-100K depending on the implantation energy and that in an agglomerate form at 1100K. The magnitude of the activation energy for the diffusion for Ar in Si was determined as 1.47eV±0.06eV from the results.
| Original language | English |
|---|---|
| Pages (from-to) | 1375-1380 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 196-201 |
| Issue number | pt 3 |
| Publication status | Published - 1995 Dec 1 |
| Event | Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: 1995 Jul 23 → 1995 Jul 28 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering