Abstract
Nano-sized inverted domain dots in ferroelectric materials is a technology with potential applications in ultrahigh-density rewritable data storage systems. Up to now, we have studied domain inversion characteristics of stoichiometric and congruent LiTaO 3 single crystals in nanoscopic area using scanning nonlinear dielectric microscopy (SNDM), which is the technique for observing ferroelectric polarization distribution with sub-nanometer resolution. In this study, we have revealed nano-sized inverted domain remained stably for a long time, and successfully formed inverted domain dots at a data density of 1.50 Tbit/inch 2 , representing the highest memory density for rewritable electric data storage reported to date.
Original language | English |
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Pages (from-to) | 51-58 |
Number of pages | 8 |
Journal | Ferroelectrics |
Volume | 292 |
DOIs | |
Publication status | Published - 2003 Jun 1 |
Keywords
- Ferroelectric data storage
- Lithium tantalate single crystal
- Scanning nonlinear dielectric microscopy
- Tbit/inch
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics