Tbit/inch 2 data storage using scanning nonlinear dielectric microscopy

Yasuo Cho; Kenjiro Fujimoto; Yoshiomi Hiranaga; Yasuo Wagatsuma; Atsushi Onoe; Kazuya Terabe; Kenji Kitamura

doi:10.1080/00150190390222817

Tbit/inch 2 data storage using scanning nonlinear dielectric microscopy

Yasuo Cho, Kenjiro Fujimoto, Yoshiomi Hiranaga, Yasuo Wagatsuma, Atsushi Onoe, Kazuya Terabe, Kenji Kitamura

Information Devices Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Nano-sized inverted domain dots in ferroelectric materials is a technology with potential applications in ultrahigh-density rewritable data storage systems. Up to now, we have studied domain inversion characteristics of stoichiometric and congruent LiTaO 3 single crystals in nanoscopic area using scanning nonlinear dielectric microscopy (SNDM), which is the technique for observing ferroelectric polarization distribution with sub-nanometer resolution. In this study, we have revealed nano-sized inverted domain remained stably for a long time, and successfully formed inverted domain dots at a data density of 1.50 Tbit/inch 2 , representing the highest memory density for rewritable electric data storage reported to date.

Original language	English
Pages (from-to)	51-58
Number of pages	8
Journal	Ferroelectrics
Volume	292
DOIs	https://doi.org/10.1080/00150190390222817
Publication status	Published - 2003 Jun 1

Keywords

Ferroelectric data storage
Lithium tantalate single crystal
Scanning nonlinear dielectric microscopy
Tbit/inch

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1080/00150190390222817

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abstract = "Nano-sized inverted domain dots in ferroelectric materials is a technology with potential applications in ultrahigh-density rewritable data storage systems. Up to now, we have studied domain inversion characteristics of stoichiometric and congruent LiTaO 3 single crystals in nanoscopic area using scanning nonlinear dielectric microscopy (SNDM), which is the technique for observing ferroelectric polarization distribution with sub-nanometer resolution. In this study, we have revealed nano-sized inverted domain remained stably for a long time, and successfully formed inverted domain dots at a data density of 1.50 Tbit/inch 2 , representing the highest memory density for rewritable electric data storage reported to date.",

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AU - Cho, Yasuo

AU - Fujimoto, Kenjiro

AU - Hiranaga, Yoshiomi

AU - Wagatsuma, Yasuo

AU - Onoe, Atsushi

AU - Terabe, Kazuya

AU - Kitamura, Kenji

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N2 - Nano-sized inverted domain dots in ferroelectric materials is a technology with potential applications in ultrahigh-density rewritable data storage systems. Up to now, we have studied domain inversion characteristics of stoichiometric and congruent LiTaO 3 single crystals in nanoscopic area using scanning nonlinear dielectric microscopy (SNDM), which is the technique for observing ferroelectric polarization distribution with sub-nanometer resolution. In this study, we have revealed nano-sized inverted domain remained stably for a long time, and successfully formed inverted domain dots at a data density of 1.50 Tbit/inch 2 , representing the highest memory density for rewritable electric data storage reported to date.

AB - Nano-sized inverted domain dots in ferroelectric materials is a technology with potential applications in ultrahigh-density rewritable data storage systems. Up to now, we have studied domain inversion characteristics of stoichiometric and congruent LiTaO 3 single crystals in nanoscopic area using scanning nonlinear dielectric microscopy (SNDM), which is the technique for observing ferroelectric polarization distribution with sub-nanometer resolution. In this study, we have revealed nano-sized inverted domain remained stably for a long time, and successfully formed inverted domain dots at a data density of 1.50 Tbit/inch 2 , representing the highest memory density for rewritable electric data storage reported to date.

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