Tbit/inch 2 data storage using scanning nonlinear dielectric microscopy

Yasuo Cho, Kenjiro Fujimoto, Yoshiomi Hiranaga, Yasuo Wagatsuma, Atsushi Onoe, Kazuya Terabe, Kenji Kitamura

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Nano-sized inverted domain dots in ferroelectric materials is a technology with potential applications in ultrahigh-density rewritable data storage systems. Up to now, we have studied domain inversion characteristics of stoichiometric and congruent LiTaO 3 single crystals in nanoscopic area using scanning nonlinear dielectric microscopy (SNDM), which is the technique for observing ferroelectric polarization distribution with sub-nanometer resolution. In this study, we have revealed nano-sized inverted domain remained stably for a long time, and successfully formed inverted domain dots at a data density of 1.50 Tbit/inch 2 , representing the highest memory density for rewritable electric data storage reported to date.

Original languageEnglish
Pages (from-to)51-58
Number of pages8
Publication statusPublished - 2003 Jun 1


  • Ferroelectric data storage
  • Lithium tantalate single crystal
  • Scanning nonlinear dielectric microscopy
  • Tbit/inch

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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