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Ta
2
O
5
-based redox memory formed by neutral beam oxidation
Takeo Ohno,
Seiji Samukawa
Advanced Institute for Materials Research (AIMR)
Innovative Energy Research Center
Research output
:
Contribution to journal
›
Article
›
peer-review
2
Citations (Scopus)
Overview
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Dive into the research topics of 'Ta
2
O
5
-based redox memory formed by neutral beam oxidation'. Together they form a unique fingerprint.
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Physics
Neutral Beams
100%
Memory
100%
Metal Films
66%
Tantalum
66%
Room Temperature
33%
Oxidation
33%
Resistive Switching
33%
Oxygen
33%
Medicine and Dentistry
Memory
100%
Tantalum
100%
Metal
100%
Oxide
33%
Irradiation
33%
Oxygen
33%
Development
33%
Engineering
Room Temperature
33%
Nanometre
33%
Great Potential
33%
Metal Oxidation
33%
Film Density
33%
Demonstrates
33%
Characteristics
33%
Development
33%
Obtains
33%
High Quality
33%
Chemistry
Liquid Film
66%
Oxidation Reaction
33%
Dioxygen
33%
Structure
33%
Ambient Reaction Temperature
33%
Irradiation
33%
Material Science
Oxidation Reaction
100%
Tantalum Oxides
33%
Irradiation
33%
Devices
33%