Abstract
We report on the role of selected silicon nanocrystal (Si-nc) synthesis techniques on the photoelectric properties of Si-ncs and conjugated poly(hexylthiophene) (P3HT)-based blends. Nanosecond laser processing - both ablation and fragmentation - in liquids and electrochemical etching are employed to fabricate surfactant-free Si-ncs. We demonstrate that the transport properties of the blend can be tuned by the processing conditions. The blends containing Si-ncs produced by laser ablation clearly show superior photovoltaic properties due to the enhanced bulk heterojunction surface area and improved charge transport. Finally, we argue that the nanosecond laser processing in liquid medium could be a flexible and efficient tool to tailor the photoelectric properties of the Si-ncs/P3HT nanocomposites.
Original language | English |
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Pages (from-to) | 764-773 |
Number of pages | 10 |
Journal | Acta Materialia |
Volume | 59 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2011 Jan 1 |
Externally published | Yes |
Keywords
- Bulk heterojunction
- Hybrid polymer blends
- Silicon nanocrystals
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys