TY - JOUR
T1 - Tailoring band structure and band filling in a simple cubic (IV, III)-VI superconductor
AU - Kriener, M.
AU - Kamitani, M.
AU - Koretsune, T.
AU - Arita, R.
AU - Taguchi, Y.
AU - Tokura, Y.
N1 - Funding Information:
The authors thank M. S. Bahramy for fruitful discussions and comments. This work was partly supported by Grants-in-Aid for Scientific Research (S) from the Japan Society for the Promotion of Science (JSPS, Grant No. 24224009), JST (Grant No. JP16H00924), PRESTO (Grant No. JPMJPR15N5), and Grants-in-Aid for Scientific Research (B) (JSPS, Grant No. 17H02770). M. Kriener was supported by a Grants-in-Aid for Scientific Research (C) (JSPS, Grant No. 15K05140).
Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/4/25
Y1 - 2018/4/25
N2 - Superconductivity and its underlying mechanisms are one of the most active research fields in condensed-matter physics. An important question is how to enhance the transition temperature Tc of a superconductor. In this respect, the possibly positive role of valence-skipping elements in the pairing mechanism has been attracting considerable interest. Here we follow this pathway and successfully enhance Tc up to almost 6 K in the simple chalcogenide SnTe known as a topological crystalline insulator by doping the valence-skipping element In substitutionally for the Sn site and codoping Se for the Te site. A high-pressure synthesis method enabled us to form single-phase solid solutions Sn1-xInxTe1-ySey over a wide composition range while keeping the cubic structure necessary for the superconductivity. Our experimental results are supported by density-functional theory calculations which suggest that even higher Tc values would be possible if the required doping range was experimentally accessible.
AB - Superconductivity and its underlying mechanisms are one of the most active research fields in condensed-matter physics. An important question is how to enhance the transition temperature Tc of a superconductor. In this respect, the possibly positive role of valence-skipping elements in the pairing mechanism has been attracting considerable interest. Here we follow this pathway and successfully enhance Tc up to almost 6 K in the simple chalcogenide SnTe known as a topological crystalline insulator by doping the valence-skipping element In substitutionally for the Sn site and codoping Se for the Te site. A high-pressure synthesis method enabled us to form single-phase solid solutions Sn1-xInxTe1-ySey over a wide composition range while keeping the cubic structure necessary for the superconductivity. Our experimental results are supported by density-functional theory calculations which suggest that even higher Tc values would be possible if the required doping range was experimentally accessible.
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U2 - 10.1103/PhysRevMaterials.2.044802
DO - 10.1103/PhysRevMaterials.2.044802
M3 - Article
AN - SCOPUS:85059613247
VL - 2
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 4
M1 - 044802
ER -