TY - JOUR
T1 - T-Type Equivalent Circuit of On-Chip Microstrip Line With Magnetic Film-Type Noise Suppressor
AU - Muroga, Sho
AU - Endo, Yasushi
AU - Takamatsu, Masanari
AU - Andoh, Hiroya
N1 - Funding Information:
This work was supported in part by KAKENHI under Grant 17H03226 and Grant 17K00090 and in part by The Naito Science & Engineering Foundation, Japan. REFERENCES
Publisher Copyright:
© 2018 IEEE.
PY - 2018/6
Y1 - 2018/6
N2 - This paper discusses R, L, G, and C parameters of an on-chip transmission line with a magnetic film for developing the design rule of a film-type electromagnetic noise suppressor. A microstrip line (MSL) is fabricated using a regular silicon process, and a Co85Zr3Nb12(Co-Zr-Nb) film is deposited on the MSL. The target frequency of the noise suppression and the passband are set to 5 GHz and a several hundred MHz range, respectively. The T-type equivalent circuit model is converted from the measured S-parameter. In the passband frequency range, the resistance value of the MSL with the magnetic film is almost the same as that without the film. The measured resistance successfully peaks at 34 Ω around the 5.4 GHz target frequency based on the ferromagnetic resonance and Joule losses. Furthermore, the inductance and the capacitance with the magnetic film are 1.3 and 2.5 times higher, respectively, than without the film because of the high permeability and metallic boundary of the magnetic film. Therefore, these results demonstrate the great usefulness of the approach for developing a standardized design method for a magnetic film-type noise suppressor.
AB - This paper discusses R, L, G, and C parameters of an on-chip transmission line with a magnetic film for developing the design rule of a film-type electromagnetic noise suppressor. A microstrip line (MSL) is fabricated using a regular silicon process, and a Co85Zr3Nb12(Co-Zr-Nb) film is deposited on the MSL. The target frequency of the noise suppression and the passband are set to 5 GHz and a several hundred MHz range, respectively. The T-type equivalent circuit model is converted from the measured S-parameter. In the passband frequency range, the resistance value of the MSL with the magnetic film is almost the same as that without the film. The measured resistance successfully peaks at 34 Ω around the 5.4 GHz target frequency based on the ferromagnetic resonance and Joule losses. Furthermore, the inductance and the capacitance with the magnetic film are 1.3 and 2.5 times higher, respectively, than without the film because of the high permeability and metallic boundary of the magnetic film. Therefore, these results demonstrate the great usefulness of the approach for developing a standardized design method for a magnetic film-type noise suppressor.
KW - EMC
KW - equivalent circuit
KW - ferromagnetic resonance (FMR) loss
KW - magnetic film
KW - noise suppression
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U2 - 10.1109/TMAG.2018.2818119
DO - 10.1109/TMAG.2018.2818119
M3 - Article
AN - SCOPUS:85045757622
VL - 54
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 6
M1 - 8001204
ER -