TY - JOUR
T1 - Systematic Application of Extremely Large Strain to Rutile-Type RuO2(100) Epitaxial Thin Films on Substrates with Large Lattice Mismatches
AU - Fatima, Zainab
AU - Oka, Daichi
AU - Fukumura, Tomoteru
N1 - Funding Information:
Z.F. acknowledges the Scholarship from the Ministry of Education, Culture, Sports, and Technology, Japan. This work was supported by JSPS KAKENHI (20H02704).
Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/7/7
Y1 - 2021/7/7
N2 - We demonstrate the systematic control of lattice strain in rutile-type RuO2(100) epitaxial thin films grown on yttria-stabilized zirconia (YSZ)(111) and α-Al2O3(0001) single-crystal substrates at various growth temperatures. The lattice strain monotonically increased by decreasing the growth temperature up to an extremely large value of 6.5%. A morphological transition in the film surface from two-dimensional (2D) to three-dimensional (3D) by decreasing the growth temperature indicated that growth-mode-induced strain contributed to the lattice strain. The thickness dependence of the strain also suggested a significant contribution of the lattice mismatch at the film/substrate interface and domain boundaries. The electrical resistivity and its temperature derivative were almost unchanged under the lattice strain up to 5%, which guarantees the reliable applications of RuO2 for catalysts and electrodes.
AB - We demonstrate the systematic control of lattice strain in rutile-type RuO2(100) epitaxial thin films grown on yttria-stabilized zirconia (YSZ)(111) and α-Al2O3(0001) single-crystal substrates at various growth temperatures. The lattice strain monotonically increased by decreasing the growth temperature up to an extremely large value of 6.5%. A morphological transition in the film surface from two-dimensional (2D) to three-dimensional (3D) by decreasing the growth temperature indicated that growth-mode-induced strain contributed to the lattice strain. The thickness dependence of the strain also suggested a significant contribution of the lattice mismatch at the film/substrate interface and domain boundaries. The electrical resistivity and its temperature derivative were almost unchanged under the lattice strain up to 5%, which guarantees the reliable applications of RuO2 for catalysts and electrodes.
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U2 - 10.1021/acs.cgd.1c00377
DO - 10.1021/acs.cgd.1c00377
M3 - Article
AN - SCOPUS:85110315024
SN - 1528-7483
VL - 21
SP - 4083
EP - 4089
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 7
ER -