Systematic Application of Extremely Large Strain to Rutile-Type RuO2(100) Epitaxial Thin Films on Substrates with Large Lattice Mismatches

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Abstract

We demonstrate the systematic control of lattice strain in rutile-type RuO2(100) epitaxial thin films grown on yttria-stabilized zirconia (YSZ)(111) and α-Al2O3(0001) single-crystal substrates at various growth temperatures. The lattice strain monotonically increased by decreasing the growth temperature up to an extremely large value of 6.5%. A morphological transition in the film surface from two-dimensional (2D) to three-dimensional (3D) by decreasing the growth temperature indicated that growth-mode-induced strain contributed to the lattice strain. The thickness dependence of the strain also suggested a significant contribution of the lattice mismatch at the film/substrate interface and domain boundaries. The electrical resistivity and its temperature derivative were almost unchanged under the lattice strain up to 5%, which guarantees the reliable applications of RuO2 for catalysts and electrodes.

Original languageEnglish
Pages (from-to)4083-4089
Number of pages7
JournalCrystal Growth and Design
Volume21
Issue number7
DOIs
Publication statusPublished - 2021 Jul 7

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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