@inproceedings{8306ec39ed1749039f75ca5cdaaed950,
title = "Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel",
abstract = "A synthetic electric field effect to enhance the tunnel FET (TFET) performances is proposed. The TFET utilizes both orthogonal and parallel electric fields induced by a wrapped gate electrode configuration. The device concept was experimentally verified by fabricating Si-TFETs integrated with ultrathin epitaxial channel. Scaling of both the channel width and channel thickness enhances the TFET performance owing to the enhanced synthetic electric field. The results predict that a fin-shape structure is promising for TFETs.",
keywords = "orthogonal electric field, parallel electric field, tunnel FET, ultrathin channel, wrapped around gate",
author = "Y. Morita and T. Mori and S. Migita and W. Mizubayashi and A. Tanabe and K. Fukuda and T. Matsukawa and K. Endo and S. O'Uchi and Liu, {Y. X.} and M. Masahara and H. Ota",
year = "2013",
month = sep,
day = "9",
language = "English",
isbn = "9784863483477",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "T236--T237",
booktitle = "2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers",
note = "2013 Symposium on VLSI Technology, VLSIT 2013 ; Conference date: 11-06-2013 Through 13-06-2013",
}