Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel

Y. Morita; T. Mori; S. Migita; W. Mizubayashi; A. Tanabe; K. Fukuda; T. Matsukawa; K. Endo; S. O'Uchi; Y. X. Liu; M. Masahara; H. Ota

Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel

Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, T. Matsukawa, K. Endo, S. O'Uchi, Y. X. Liu, M. Masahara, H. Ota

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

41 Citations (Scopus)

Abstract

A synthetic electric field effect to enhance the tunnel FET (TFET) performances is proposed. The TFET utilizes both orthogonal and parallel electric fields induced by a wrapped gate electrode configuration. The device concept was experimentally verified by fabricating Si-TFETs integrated with ultrathin epitaxial channel. Scaling of both the channel width and channel thickness enhances the TFET performance owing to the enhanced synthetic electric field. The results predict that a fin-shape structure is promising for TFETs.

Original language	English
Title of host publication	2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
Pages	T236-T237
Publication status	Published - 2013 Sep 9
Externally published	Yes
Event	2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan Duration: 2013 Jun 11 → 2013 Jun 13

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2013 Symposium on VLSI Technology, VLSIT 2013
Country	Japan
City	Kyoto
Period	13/6/11 → 13/6/13

Keywords

orthogonal electric field
parallel electric field
tunnel FET
ultrathin channel
wrapped around gate

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Morita, Y., Mori, T., Migita, S., Mizubayashi, W., Tanabe, A., Fukuda, K., Matsukawa, T., Endo, K., O'Uchi, S., Liu, Y. X., Masahara, M., & Ota, H. (2013). Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel. In 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers (pp. T236-T237). [6576658] (Digest of Technical Papers - Symposium on VLSI Technology).

Synthetic electric field tunnel FETs : Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel. / Morita, Y.; Mori, T.; Migita, S.; Mizubayashi, W.; Tanabe, A.; Fukuda, K.; Matsukawa, T.; Endo, K.; O'Uchi, S.; Liu, Y. X.; Masahara, M.; Ota, H.

2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 2013. p. T236-T237 6576658 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Morita, Y, Mori, T, Migita, S, Mizubayashi, W, Tanabe, A, Fukuda, K, Matsukawa, T, Endo, K, O'Uchi, S, Liu, YX, Masahara, M & Ota, H 2013, Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel. in 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers., 6576658, Digest of Technical Papers - Symposium on VLSI Technology, pp. T236-T237, 2013 Symposium on VLSI Technology, VLSIT 2013, Kyoto, Japan, 13/6/11.

Morita Y, Mori T, Migita S, Mizubayashi W, Tanabe A, Fukuda K et al. Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel. In 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 2013. p. T236-T237. 6576658. (Digest of Technical Papers - Symposium on VLSI Technology).

Morita, Y. ; Mori, T. ; Migita, S. ; Mizubayashi, W. ; Tanabe, A. ; Fukuda, K. ; Matsukawa, T. ; Endo, K. ; O'Uchi, S. ; Liu, Y. X. ; Masahara, M. ; Ota, H. / Synthetic electric field tunnel FETs : Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel. 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 2013. pp. T236-T237 (Digest of Technical Papers - Symposium on VLSI Technology).

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abstract = "A synthetic electric field effect to enhance the tunnel FET (TFET) performances is proposed. The TFET utilizes both orthogonal and parallel electric fields induced by a wrapped gate electrode configuration. The device concept was experimentally verified by fabricating Si-TFETs integrated with ultrathin epitaxial channel. Scaling of both the channel width and channel thickness enhances the TFET performance owing to the enhanced synthetic electric field. The results predict that a fin-shape structure is promising for TFETs.",

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AB - A synthetic electric field effect to enhance the tunnel FET (TFET) performances is proposed. The TFET utilizes both orthogonal and parallel electric fields induced by a wrapped gate electrode configuration. The device concept was experimentally verified by fabricating Si-TFETs integrated with ultrathin epitaxial channel. Scaling of both the channel width and channel thickness enhances the TFET performance owing to the enhanced synthetic electric field. The results predict that a fin-shape structure is promising for TFETs.

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