Synthetic CoFeB/Ru/NiFe free layer on MgO barrier layer for spin transfer switching

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Abstract

In order to study the application potential of spin transfer switching in magnetic tunnel junctions (MTJs), a synthetic parallelly coupled layered structure such as a hard CoFeB/Ru/soft NiFe layers deposited on a MgO layer is investigated. The magnetic coupling between the layers is maintained · · after post-annealing at 300 °C, while annealing at 350 °C reduces the coupling strength. The observation of spin transfer switching in the junction indicates that parallel-to-antiparallel transition does not occur when the applied current pulse width is in the sub-millisecond range, which is far from the precessional range. This result indicates that spin transfer from NiFe to CoFeB might affect the dynamics of CoFeB magnetization.

Original languageEnglish
Article number062019
JournalJournal of Physics: Conference Series
Volume200
Issue numberSECTION 6
DOIs
Publication statusPublished - 2010 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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