TY - JOUR
T1 - Synthesis of SiC/SiO2 core-shell powder by rotary chemical vapor deposition and its consolidation by spark plasma sintering
AU - He, Zhenhua
AU - Tu, Rong
AU - Katsui, Hirokazu
AU - Goto, Takashi
N1 - Funding Information:
This research was supported by the Japan Global COE program ; the Institute for Materials Research, Tohoku University ; the China Scholarship Council ; and the State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, PRC .
PY - 2013/4
Y1 - 2013/4
N2 - SiC (core) and SiO2 (shell) powders were synthesized via rotary chemical vapor deposition (RCVD). The SiC particles (3C, <1 μm in diameter) were coated with a layer of SiO2 (10-15 nm in thickness). Using spark plasma sintering, the SiC/SiO2 nanopowders were then synthesized into SiC/SiO2 composite bodies. Although a phase transformation from 3C to 6H was observed at above 2123 K in the sintered monolithic SiC bodies, sintered SiC/SiO2 bodies did not display such phase transformation. In addition, SiC/SiO2 bodies did not exhibited grain growth until the sintering temperature reached 2223 K. The density and Vickers hardness of the sintered SiC/SiO2 bodies increased with increasing sintering temperature. The highest density and hardness of SiC/SiO2 composite bodies were 98.1% and 24.4 GPa at 2223 K, respectively, which were higher than the corresponding values of 90% and 14 GPa for monolithic SiC bodies.
AB - SiC (core) and SiO2 (shell) powders were synthesized via rotary chemical vapor deposition (RCVD). The SiC particles (3C, <1 μm in diameter) were coated with a layer of SiO2 (10-15 nm in thickness). Using spark plasma sintering, the SiC/SiO2 nanopowders were then synthesized into SiC/SiO2 composite bodies. Although a phase transformation from 3C to 6H was observed at above 2123 K in the sintered monolithic SiC bodies, sintered SiC/SiO2 bodies did not display such phase transformation. In addition, SiC/SiO2 bodies did not exhibited grain growth until the sintering temperature reached 2223 K. The density and Vickers hardness of the sintered SiC/SiO2 bodies increased with increasing sintering temperature. The highest density and hardness of SiC/SiO2 composite bodies were 98.1% and 24.4 GPa at 2223 K, respectively, which were higher than the corresponding values of 90% and 14 GPa for monolithic SiC bodies.
KW - Rotary chemical vapor deposition (RCVD)
KW - SiO nano-layer
KW - Silicon carbide (SiC)
KW - Spark plasma sintering (SPS)
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U2 - 10.1016/j.ceramint.2012.09.025
DO - 10.1016/j.ceramint.2012.09.025
M3 - Article
AN - SCOPUS:84872970871
VL - 39
SP - 2605
EP - 2610
JO - Ceramics International
JF - Ceramics International
SN - 0272-8842
IS - 3
ER -