Synthesis of SiC via low-temperature heating of graphite and Si with Na flux

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SiC was prepared by heating a mixture of graphite and Si powders with sodium over the temperature range 1173-1273 K and was characterized via X-ray diffraction, electron microscopy, and electron diffraction. The sample prepared at 1273 K exhibited aggregates of truncated hexagonal pyramid-shaped SiC crystals that were a few hundreds nanometers in size, as evidenced by scanning electron microscopy. Transmission electron microscopy and electron diffraction revealed that the crystals contained stacking faults along [111] of the cubic lattice of β-type.

Original languageEnglish
Pages (from-to)930-933
Number of pages4
JournalJournal of the Ceramic Society of Japan
Issue number1419
Publication statusPublished - 2013 Nov


  • Graphite
  • Powder
  • Silicon carbide
  • Sodium
  • Stacking faults

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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