Synthesis of pseudobrookite titanium oxynitride Ti3-δO4N films by laser chemical vapor deposition

Akihiko Ito; Hye Sook Joo; Taek Soo Kim; Takashi Goto

doi:10.1016/j.vacuum.2015.03.015

Synthesis of pseudobrookite titanium oxynitride Ti_3-δO₄N films by laser chemical vapor deposition

Akihiko Ito, Hye Sook Joo, Taek Soo Kim, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Pseudobrookite Ti_3-δO₄N films were prepared by laser chemical vapor deposition with titanium tetraisopropoxide and NH₃ as precursors. By increasing the deposition temperature from 964 K to 1294 K, the phase composition of the films changed from TiO₂ to Ti_3-δO₄N and subsequently to Ti(O,N). Ti_3-δO₄N films with fine columnar grains were obtained at 1030 K and at a total chamber pressure of 0.6-0.8 kPa. The deposition rate of these films reached 7 μm h^-1.

Original language	English
Pages (from-to)	121-123
Number of pages	3
Journal	Vacuum
Volume	116
DOIs	https://doi.org/10.1016/j.vacuum.2015.03.015
Publication status	Published - 2015 Jun 1

Keywords

Laser chemical vapor deposition
Pseudobrookite
TiON
Titanium oxynitride

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

Access to Document

10.1016/j.vacuum.2015.03.015

Cite this

@article{eb895ba5c6cc4527af66927c3aa9f04f,

title = "Synthesis of pseudobrookite titanium oxynitride Ti3-δO4N films by laser chemical vapor deposition",

abstract = "Pseudobrookite Ti3-δO4N films were prepared by laser chemical vapor deposition with titanium tetraisopropoxide and NH3 as precursors. By increasing the deposition temperature from 964 K to 1294 K, the phase composition of the films changed from TiO2 to Ti3-δO4N and subsequently to Ti(O,N). Ti3-δO4N films with fine columnar grains were obtained at 1030 K and at a total chamber pressure of 0.6-0.8 kPa. The deposition rate of these films reached 7 μm h-1.",

keywords = "Laser chemical vapor deposition, Pseudobrookite, TiON, Titanium oxynitride",

author = "Akihiko Ito and Joo, {Hye Sook} and Kim, {Taek Soo} and Takashi Goto",

year = "2015",

month = jun,

day = "1",

doi = "10.1016/j.vacuum.2015.03.015",

language = "English",

volume = "116",

pages = "121--123",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Synthesis of pseudobrookite titanium oxynitride Ti3-δO4N films by laser chemical vapor deposition

AU - Ito, Akihiko

AU - Joo, Hye Sook

AU - Kim, Taek Soo

AU - Goto, Takashi

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Pseudobrookite Ti3-δO4N films were prepared by laser chemical vapor deposition with titanium tetraisopropoxide and NH3 as precursors. By increasing the deposition temperature from 964 K to 1294 K, the phase composition of the films changed from TiO2 to Ti3-δO4N and subsequently to Ti(O,N). Ti3-δO4N films with fine columnar grains were obtained at 1030 K and at a total chamber pressure of 0.6-0.8 kPa. The deposition rate of these films reached 7 μm h-1.

AB - Pseudobrookite Ti3-δO4N films were prepared by laser chemical vapor deposition with titanium tetraisopropoxide and NH3 as precursors. By increasing the deposition temperature from 964 K to 1294 K, the phase composition of the films changed from TiO2 to Ti3-δO4N and subsequently to Ti(O,N). Ti3-δO4N films with fine columnar grains were obtained at 1030 K and at a total chamber pressure of 0.6-0.8 kPa. The deposition rate of these films reached 7 μm h-1.

KW - Laser chemical vapor deposition

KW - Pseudobrookite

KW - TiON

KW - Titanium oxynitride

UR - http://www.scopus.com/inward/record.url?scp=84926504833&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926504833&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2015.03.015

DO - 10.1016/j.vacuum.2015.03.015

M3 - Article

AN - SCOPUS:84926504833

VL - 116

SP - 121

EP - 123

JO - Vacuum

JF - Vacuum

SN - 0042-207X

ER -