Synthesis of Ga2O3 nanorods with ultra-sharp tips for high-performance field emission devices

Yavuz Bayam, V. J. Logeeswaran, Aaron M. Katzenmeyer, Ramin Banan Sadeghian, Rebecca J. Chacon, Michael C. Wong, Charles E. Hunt, Kenichi Motomiya, Balachandran Jeyadevan, M. Saif Islam

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)


    We synthesized catalyst-free β-Ga2O3 nanorods with terminated ultra-sharp tips by heat treating single crystalline GaAs in a chemical vapor deposition (CVD) chamber without introducing a precursor. The unique, straight-forward, synthetic route and a possible growth mechanism are discussed to explain the different morphology of the grown nanorods and the ultra-sharp nanostructures. The morphology and structure of the nanorods were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and Raman-spectroscopy. The ultra-sharp tips were found to have radii of ~3-5 nm and were utilized to achieve enhanced field emission. The field emission characteristics demonstrated a turn-on field of 2.1 Vμm-1, a threshold electric field of 5.6 Vμm-1, and a geometrical field enhancement factor of 3786, making them comparable to nanostructured diamond and highly oriented single wall carbon nanotubes.

    Original languageEnglish
    Pages (from-to)211-218
    Number of pages8
    JournalScience of Advanced Materials
    Issue number2
    Publication statusPublished - 2015


    • Field emission
    • Field enhancement factor
    • Gallium oxide
    • Nanorod

    ASJC Scopus subject areas

    • Materials Science(all)


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