Synthesis of Fe16N2 films by using reactive plasma

Migaku Takahashi; Hiroki Shoji; Hideyuki Takahashi; Tokuo Wakiyama; Mikio Kinoshita; Wasaburo Ohta

doi:10.1109/20.281111

Synthesis of Fe₁₆N₂ films by using reactive plasma

Migaku Takahashi, Hiroki Shoji, Hideyuki Takahashi, Tokuo Wakiyama, Mikio Kinoshita, Wasaburo Ohta

Tohoku University

Research output: Contribution to journal › Article › peer-review

84 Citations (Scopus)

Abstract

Synthesis of α″-Fe₁₆N₂ films using reactive plasma was examined by conventional sputtering and plasma evaporation, respectively. Under controlled plasma (T_e=0.2approx.0.6eV, N_e≅10⁹ cm^-3) α″-Fe₁₆N₂ films were synthesized on MgO single crystal substrates with film thickness ranging from 0.03 to 1 μ m for sputtering and 0.2 μ m for plasma evaporation. Deposition rate was 200angstrom/min for sputtering and 100approx.420angstrom/min for plasma evaporation. σ_s for α″-Fe₁₆N₂ films fabricated by plasma evaporation showed 235 emu/g and for the sputtered films showed 218 emu/g. These values are very small compared to the earlier reported value, 2.9T (310emu/g). The effects of ordering of N atoms in b.c.t. lattice and volume effect of unit cell are discussed in connection with σ_s.

Original language	English
Pages (from-to)	3040-3045
Number of pages	6
Journal	IEEE Transactions on Magnetics
Volume	29
Issue number	6 pt 1
DOIs	https://doi.org/10.1109/20.281111
Publication status	Published - 1993 Nov

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)

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title = "Synthesis of Fe16N2 films by using reactive plasma",

abstract = "Synthesis of α″-Fe16N2 films using reactive plasma was examined by conventional sputtering and plasma evaporation, respectively. Under controlled plasma (Te=0.2approx.0.6eV, Ne≅109 cm-3) α″-Fe16N2 films were synthesized on MgO single crystal substrates with film thickness ranging from 0.03 to 1 μ m for sputtering and 0.2 μ m for plasma evaporation. Deposition rate was 200angstrom/min for sputtering and 100approx.420angstrom/min for plasma evaporation. σs for α″-Fe16N2 films fabricated by plasma evaporation showed 235 emu/g and for the sputtered films showed 218 emu/g. These values are very small compared to the earlier reported value, 2.9T (310emu/g). The effects of ordering of N atoms in b.c.t. lattice and volume effect of unit cell are discussed in connection with σs.",

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AU - Takahashi, Migaku

AU - Shoji, Hiroki

AU - Takahashi, Hideyuki

AU - Wakiyama, Tokuo

AU - Kinoshita, Mikio

AU - Ohta, Wasaburo

PY - 1993/11

Y1 - 1993/11

N2 - Synthesis of α″-Fe16N2 films using reactive plasma was examined by conventional sputtering and plasma evaporation, respectively. Under controlled plasma (Te=0.2approx.0.6eV, Ne≅109 cm-3) α″-Fe16N2 films were synthesized on MgO single crystal substrates with film thickness ranging from 0.03 to 1 μ m for sputtering and 0.2 μ m for plasma evaporation. Deposition rate was 200angstrom/min for sputtering and 100approx.420angstrom/min for plasma evaporation. σs for α″-Fe16N2 films fabricated by plasma evaporation showed 235 emu/g and for the sputtered films showed 218 emu/g. These values are very small compared to the earlier reported value, 2.9T (310emu/g). The effects of ordering of N atoms in b.c.t. lattice and volume effect of unit cell are discussed in connection with σs.

AB - Synthesis of α″-Fe16N2 films using reactive plasma was examined by conventional sputtering and plasma evaporation, respectively. Under controlled plasma (Te=0.2approx.0.6eV, Ne≅109 cm-3) α″-Fe16N2 films were synthesized on MgO single crystal substrates with film thickness ranging from 0.03 to 1 μ m for sputtering and 0.2 μ m for plasma evaporation. Deposition rate was 200angstrom/min for sputtering and 100approx.420angstrom/min for plasma evaporation. σs for α″-Fe16N2 films fabricated by plasma evaporation showed 235 emu/g and for the sputtered films showed 218 emu/g. These values are very small compared to the earlier reported value, 2.9T (310emu/g). The effects of ordering of N atoms in b.c.t. lattice and volume effect of unit cell are discussed in connection with σs.

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Synthesis of Fe₁₆N₂ films by using reactive plasma

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