Synthesis of α″-Fe16N2 films using reactive plasma was examined by conventional sputtering and plasma evaporation, respectively. Under controlled plasma (Te=0.2approx.0.6eV, Ne≅109 cm-3) α″-Fe16N2 films were synthesized on MgO single crystal substrates with film thickness ranging from 0.03 to 1 μ m for sputtering and 0.2 μ m for plasma evaporation. Deposition rate was 200angstrom/min for sputtering and 100approx.420angstrom/min for plasma evaporation. σs for α″-Fe16N2 films fabricated by plasma evaporation showed 235 emu/g and for the sputtered films showed 218 emu/g. These values are very small compared to the earlier reported value, 2.9T (310emu/g). The effects of ordering of N atoms in b.c.t. lattice and volume effect of unit cell are discussed in connection with σs.
|Number of pages||6|
|Journal||IEEE Transactions on Magnetics|
|Issue number||6 pt 1|
|Publication status||Published - 1993 Nov|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)