Synthesis of Fe16N2 compound films by reactive sputtering

H. Shoji, H. Takahashi, M. Kunii, M. Takahashi, T. Wakiyama

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Fe16N2 films (of thickness 3000 angstroms) were fabricated on MgO (001) substrates by the conventional dc facing target sputtering method using a controlled reactive plasma, at an electron temperature of Te = 0.3 eV, an electron density of Ne = 1×1010 cm-3, a deposition rate of 200 angstroms/min and an N2 flow ratio ranging from 10% to 20%. In the as-deposited state, single α′ phases with various nitrogen contents were formed. After annealing at 150 °C for two hours, an α″ phase (≅11 at% N) and an α′ phase (11.1 at% N and 1 to 2 at% N) were formed. The Ms value was nearly the same as for α-Fe (2.2 T), despite the existence of the α″ phase. The lattice constant c of the α″ phase in these films agreed well with the value reported by Jack, but lattice constant a values were about 1 to 3% smaller than Jack's value. The unit cell volumes of the α″ phase in these films were between 192.5 and 202.6 angstroms3, from 1.4 to 6.3% less than Jack's value of 205.5 angstroms3.

Original languageEnglish
Pages (from-to)152-157
Number of pages6
JournalIEEE translation journal on magnetics in Japan
Issue number1
Publication statusPublished - 1994 Jan

ASJC Scopus subject areas

  • Engineering(all)


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