Synthesis of Eu-doped GaN by the Na flux method and characterization

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Eu-doped GaN crystals were synthesized at 600-750°C and N2 pressure of 5 MPa from 1 mol% Eu-added Na-Ga melts. The yield and morphology of crystals varied with temperature and Na mole fraction, rNa=Na/(Na+Ga) in the melts. Colorless transparent columnar crystals of Eu-doped GaN were obtained as crusts formed on the Na-Ga melt surface at rNa=0.67 and 650 or 700 °C. Under an ultraviolet light, the crusts glowed red. A strong emission peak concerned with the intra-4f transition of Eu3+from 5D0 to 7F2 was observed at 621 nm in the photoluminescence (PL) spectrum. The maximum PL intensity was observed in the sample prepared at rNa=0.67 and 650 °C.

Original languageEnglish
Pages (from-to)126-129
Number of pages4
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Issue number2
Publication statusPublished - 2007 Feb


  • Eu-doped
  • GaN
  • Na flux method
  • Photoluminescence

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry

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