Synthesis of cubic boron nitride films on Si tips via chemical vapor deposition and the field emission properties

Masanori Kobayashi, Hidetoshi Miyashita, Naoki Inomata, Takahito Ono

Research output: Contribution to journalArticlepeer-review

Abstract

A thin film of boron nitride (BN) is synthesized on an Si substrate using BCl3 and NH3 as source gases via thermal chemical vapor deposition. Cubic BN (c-BN) is preferentially synthesized when an Fe thin film is used as a catalyst. The dependences of the structural properties of the synthesized thin BN films upon the Fe film thickness and synthesis temperature are investigated. The composition rate of c-BN to hexagonal BN increases with increasing Fe film thickness and with lowering synthesis temperature. The c-BN film exhibits negative electron affinity, which is estimated to be -0.07 eV. Emission current is observed from the BN-coated Si tip at electric fields higher than 14 V μm-1, and an emission current of 27.1 μA is obtained at an electric field of 27.6 V μm-1. Larger emission currents can be achieved using the BN-coated Si emitter compared to a bare Si tip.

Original languageEnglish
Article number02B102
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume32
Issue number2
DOIs
Publication statusPublished - 2014 Mar 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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