Abstract
For the first time to our knowledge, BaTi(Hf0.5Zr0.5)O3 (BTHZ) thin films have been successfully synthesized using a laser ablation technique that employs the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser. The BTHZ thin film with a preferred orientation in the c-axis was prepared under an oxygen gas pressure of 3 Pa at 800°C. Chemical bonds in the BTHZ compounds can easily be broken by irradiation at an optical energy of 7.47 × 10-19 J and an optical power density of 300 mJ/cm2. Crystallinity of the deposited films is dominated by the mean free path of each element.
Original language | English |
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Pages (from-to) | 5834-5839 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 36 |
Issue number | 9 SUPPL. B |
DOIs | |
Publication status | Published - 1997 Sept |
Keywords
- BaTi(HfZr)O
- BaTiO family
- Ferroelectrics
- Fourth harmonic generation
- Thin films
- YAG laser ablation
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)