Boron carbonitride films were deposited on silicon wafers by low pressure chemical vapor deposition from gaseous mixture of trimethylamino borane (TMAB) or triethylamino borane (TEAB) complexes and ammonia, nitrogen or helium. BCxNy films with different composition were obtained by varying composition of initial gas mixture and deposition temperature. Ellipsometry, IR spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger spectroscopy, high resolution transmittance electron microscopy (HREM), X-ray diffraction using synchrotron radiation were used for film characterization. BCxNy films with microhardness up to 40 GPa was synthesized.
|Number of pages||6|
|Publication status||Published - 2005 Dec 1|
|Event||15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, Germany|
Duration: 2005 Sep 5 → 2005 Sep 9
|Other||15th European Conference on Chemical Vapor Deposition, EUROCVD-15|
|Period||05/9/5 → 05/9/9|
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