Abstract
Single crystals of the quaternary compound Ba8Cu3In4N5 were prepared by heating Ba, Cu, and In in a Na flux at 1023 K under 7 MPa of N2, and by slow cooling from this temperature. The crystal structure was analyzed by single-crystal X-ray diffraction. It crystallizes in an orthorhombic cell (space group Immm (No. 71), Z=2) with a=4.0781(6), b=12.588(2), and c = 19.804(3) Å at 298 K. The structural formula is expressed as Ba8[CuN2]2[CuN]In4. Nitridocuprates of one-dimensional chains ∞1[CuN2/2] and isolated units 0[CuN2], and one-dimensional indium clusters ∞1[In2In4/2] are contained in the structure. A split-site model applied for the arrangement of ∞1[CuN2/2] chains suggested that there is a short-bond, long-bond alternation of the Cu-N bondings. The electrical resistivity of Ba8Cu3In4N5 was 3.44 mΩ·cm at 298 K. A metallic temperature dependence of the resistivity was observed down to 10 K.
Original language | English |
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Pages (from-to) | 449-454 |
Number of pages | 6 |
Journal | Journal of Solid State Chemistry |
Volume | 163 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2002 Jan 1 |
Keywords
- Barium copper nitride indium
- Crystal structure
- Indium cluster
- Nitridocuprates
- Single-crystal X-ray diffraction
- Zintl anion
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Physical and Theoretical Chemistry
- Inorganic Chemistry
- Materials Chemistry