Synthesis and long-period phosphorescence of ZnGa2O4:Mn2+ spinel

Kyota Uheda; Takuya Maruyama; Hirotsugu Takizawa; Tadashi Endo

doi:10.1016/S0925-8388(97)00329-0

Synthesis and long-period phosphorescence of ZnGa₂O₄:Mn²⁺ spinel

Kyota Uheda, Takuya Maruyama, Hirotsugu Takizawa, Tadashi Endo

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Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

Novel long-period phosphor ZnGa₂O₄:Mn²⁺ was prepared by a conventional solid reaction of ZnO, Ga₂O₃ and Mn(NO₃)₂ under conditions of > 1000°C for 24 h in flowing Ar gas. The phosphor had green intense emission peaking at 503.6 nm. The improvement of emission intensity was brought out by the higher temperature processing. This implied that long lifetime phosphorescence was closely related to the formation of vacancies at the Zn²⁺ sites of the host lattice. The carrier trap level was positioned at 0.71 eV higher than the valence band of host lattice. The possible mechanism for prolonging the emission for a long time was discussed.

Original language	English
Pages (from-to)	60-64
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	262-263
DOIs	https://doi.org/10.1016/S0925-8388(97)00329-0
Publication status	Published - 1997 Nov 14

Keywords

Green intense emission
Long-period phosphorescence
Manganese-activated phosphor
Non-stoichiometric spinel
Zinc gallates

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0925-8388(97)00329-0

Cite this

@article{35d49f8795aa42caa129315b59a422d3,

title = "Synthesis and long-period phosphorescence of ZnGa2O4:Mn2+ spinel",

abstract = "Novel long-period phosphor ZnGa2O4:Mn2+ was prepared by a conventional solid reaction of ZnO, Ga2O3 and Mn(NO3)2 under conditions of > 1000°C for 24 h in flowing Ar gas. The phosphor had green intense emission peaking at 503.6 nm. The improvement of emission intensity was brought out by the higher temperature processing. This implied that long lifetime phosphorescence was closely related to the formation of vacancies at the Zn2+ sites of the host lattice. The carrier trap level was positioned at 0.71 eV higher than the valence band of host lattice. The possible mechanism for prolonging the emission for a long time was discussed.",

keywords = "Green intense emission, Long-period phosphorescence, Manganese-activated phosphor, Non-stoichiometric spinel, Zinc gallates",

author = "Kyota Uheda and Takuya Maruyama and Hirotsugu Takizawa and Tadashi Endo",

note = "Funding Information: The authors wish to thank Dr T. Hase of Kasei Optonics Co. Ltd. for fruitful discussions. This work was supported in part by a Gra~lt-in-Aid for Scientitic Research on Priority Areas {"}Physics and Chemistry of Functionally Graded Materials' of the Ministry of Education, Science and Culture.",

year = "1997",

month = nov,

day = "14",

doi = "10.1016/S0925-8388(97)00329-0",

language = "English",

volume = "262-263",

pages = "60--64",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Synthesis and long-period phosphorescence of ZnGa2O4:Mn2+ spinel

AU - Uheda, Kyota

AU - Maruyama, Takuya

AU - Takizawa, Hirotsugu

AU - Endo, Tadashi

N1 - Funding Information: The authors wish to thank Dr T. Hase of Kasei Optonics Co. Ltd. for fruitful discussions. This work was supported in part by a Gra~lt-in-Aid for Scientitic Research on Priority Areas "Physics and Chemistry of Functionally Graded Materials' of the Ministry of Education, Science and Culture.

PY - 1997/11/14

Y1 - 1997/11/14

N2 - Novel long-period phosphor ZnGa2O4:Mn2+ was prepared by a conventional solid reaction of ZnO, Ga2O3 and Mn(NO3)2 under conditions of > 1000°C for 24 h in flowing Ar gas. The phosphor had green intense emission peaking at 503.6 nm. The improvement of emission intensity was brought out by the higher temperature processing. This implied that long lifetime phosphorescence was closely related to the formation of vacancies at the Zn2+ sites of the host lattice. The carrier trap level was positioned at 0.71 eV higher than the valence band of host lattice. The possible mechanism for prolonging the emission for a long time was discussed.

AB - Novel long-period phosphor ZnGa2O4:Mn2+ was prepared by a conventional solid reaction of ZnO, Ga2O3 and Mn(NO3)2 under conditions of > 1000°C for 24 h in flowing Ar gas. The phosphor had green intense emission peaking at 503.6 nm. The improvement of emission intensity was brought out by the higher temperature processing. This implied that long lifetime phosphorescence was closely related to the formation of vacancies at the Zn2+ sites of the host lattice. The carrier trap level was positioned at 0.71 eV higher than the valence band of host lattice. The possible mechanism for prolonging the emission for a long time was discussed.

KW - Green intense emission

KW - Long-period phosphorescence

KW - Manganese-activated phosphor

KW - Non-stoichiometric spinel

KW - Zinc gallates

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JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

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