Abstract
Novel long-period phosphor ZnGa2O4:Mn2+ was prepared by a conventional solid reaction of ZnO, Ga2O3 and Mn(NO3)2 under conditions of > 1000°C for 24 h in flowing Ar gas. The phosphor had green intense emission peaking at 503.6 nm. The improvement of emission intensity was brought out by the higher temperature processing. This implied that long lifetime phosphorescence was closely related to the formation of vacancies at the Zn2+ sites of the host lattice. The carrier trap level was positioned at 0.71 eV higher than the valence band of host lattice. The possible mechanism for prolonging the emission for a long time was discussed.
Original language | English |
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Pages (from-to) | 60-64 |
Number of pages | 5 |
Journal | Journal of Alloys and Compounds |
Volume | 262-263 |
DOIs | |
Publication status | Published - 1997 Nov 14 |
Keywords
- Green intense emission
- Long-period phosphorescence
- Manganese-activated phosphor
- Non-stoichiometric spinel
- Zinc gallates
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry