Abstract
Lead-free ferroelectric Bi4Ti3O12 (BIT) thin films were modified by the cosubstitution of Sr2+ for Bi3+ and of Nb5+ for Ti4+ by spin-coating and decomposition of chemical solutions of metal-alkoxide materials (the nominal compositions of Bi4-xSrxTi3-xNbxO12 (BSTN) are x = 0.5, 1.0, 1.5). Single-phase thin films with a BIT-type structure were crystallized above 550°C. At room temperature, the ferroelectric and dielectric properties were found to be Pr = 10 μC/cm2, Ec = 100 kV/cm, εr = 300, and tan δ < 5% for x = 0.5 after annealing at 650°C. The films with x = 1.0 and 1.5 did not exhibit ferroelectric hysteresis behavior because of the decrease in Curie temperature (Tc) below room temperature. The x dependence of of Tc was studied by considering the soft mode behavior in Raman scattering spectra and the Tc values were 400, -25, and -220°C for x = 0.5, 1.0, and 1.5, respectively. The cosubstitution by Sr2+ and Nb5+ is effective for reducing ferroelectric interaction between electrical dipoles leading to a large shift in Tc. Because of its high solubility of Sr2+ and Nb5+ and efficiency for shifting Tc, the BSTN system may find a novel application as a dielectric material rather than as a ferroelectric material.
Original language | English |
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Pages (from-to) | L949-L952 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 42 |
Issue number | 8 A |
DOIs | |
Publication status | Published - 2003 Aug 1 |
Keywords
- Bismuth-layer-structured ferroelectrics
- Chemical solution deposition
- Crystallization temperature
- Dielectric property
- Ferroelectric property
- Shift of Curie temperature
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)