Synthesis and characterizations of linear- and angular-shaped naphthodithiophenes for organic semiconductors

K. Takimiya, I. Osaka, S. Shinamura, E. Miyazaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Syntheses, characterizations, and applications to organic field-effect transistors (OFETs) of four isomeric naphthodithiophenes (NDTs) are reported. The NDT cores are utilized to both small-molecular organic semiconductors for vapor-processed OFETs and polymer semiconductors for solution processed OFETs. For the vapor-processed OFETs, the linear-shaped NDT gives the best material showing mobility of up to 1.5 cm2 V-1 s-1, whereas for the polymer-based solution-processed OFETs, the angular-shaped NDT gives better results with mobility as high as 0.77 cm2 V-1 s-1. To understand the different trends in the mobility of the two systems, the packing structure and intermolecular orbital interaction are studied.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors X
DOIs
Publication statusPublished - 2011 Oct 11
Externally publishedYes
EventOrganic Field-Effect Transistors X - San Diego, CA, United States
Duration: 2011 Aug 222011 Aug 23

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8117
ISSN (Print)0277-786X

Other

OtherOrganic Field-Effect Transistors X
CountryUnited States
CitySan Diego, CA
Period11/8/2211/8/23

Keywords

  • Conjugated polymer
  • Naphthodithiophene
  • Organic field-effect transistor
  • Organic semiconductor
  • Thienoacene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Takimiya, K., Osaka, I., Shinamura, S., & Miyazaki, E. (2011). Synthesis and characterizations of linear- and angular-shaped naphthodithiophenes for organic semiconductors. In Organic Field-Effect Transistors X [811702] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8117). https://doi.org/10.1117/12.893169