Synergistic effects of implanted helium and hydrogen and the effect of irradiation temperature on the microstructure of SiC/SiC composites

T. Taguchi; N. Igawa; S. Miwa; E. Wakai; S. Jitsukawa; L. L. Snead; Akira Hasegawa

doi:10.1016/j.jnucmat.2004.08.014

Synergistic effects of implanted helium and hydrogen and the effect of irradiation temperature on the microstructure of SiC/SiC composites

T. Taguchi, N. Igawa, S. Miwa, E. Wakai, S. Jitsukawa, L. L. Snead, Akira Hasegawa

ENG - Quantum Science and Energy Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

The microstructure of near-stoichiometric fiber SiC/SiC composites implanted with He and H ions was studied at implantation temperatures of 1000 and 1300°C. The average size of He bubbles in the CVI SiC matrix decreases with increasing concentration of implanted H ions. Moreover, the number density of He bubbles increases with increasing irradiation temperature and amount of implanted H. At the irradiation temperature of 1000°C, He bubbles were mainly formed at grain boundary within the matrix. On the other hand, He bubbles were formed both at grain boundaries and within grains at the irradiation temperature of 1300°C. The average size of He bubbles at grain boundaries was much larger than within the grain. The average size of He bubbles in the fiber was smaller than that in the matrix in all cases.

Original language	English
Pages (from-to)	508-514
Number of pages	7
Journal	Journal of Nuclear Materials
Volume	335
Issue number	3
DOIs	https://doi.org/10.1016/j.jnucmat.2004.08.014
Publication status	Published - 2004 Dec 1

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Materials Science(all)

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10.1016/j.jnucmat.2004.08.014

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title = "Synergistic effects of implanted helium and hydrogen and the effect of irradiation temperature on the microstructure of SiC/SiC composites",

abstract = "The microstructure of near-stoichiometric fiber SiC/SiC composites implanted with He and H ions was studied at implantation temperatures of 1000 and 1300°C. The average size of He bubbles in the CVI SiC matrix decreases with increasing concentration of implanted H ions. Moreover, the number density of He bubbles increases with increasing irradiation temperature and amount of implanted H. At the irradiation temperature of 1000°C, He bubbles were mainly formed at grain boundary within the matrix. On the other hand, He bubbles were formed both at grain boundaries and within grains at the irradiation temperature of 1300°C. The average size of He bubbles at grain boundaries was much larger than within the grain. The average size of He bubbles in the fiber was smaller than that in the matrix in all cases.",

author = "T. Taguchi and N. Igawa and S. Miwa and E. Wakai and S. Jitsukawa and Snead, {L. L.} and Akira Hasegawa",

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TY - JOUR

T1 - Synergistic effects of implanted helium and hydrogen and the effect of irradiation temperature on the microstructure of SiC/SiC composites

AU - Taguchi, T.

AU - Igawa, N.

AU - Miwa, S.

AU - Wakai, E.

AU - Jitsukawa, S.

AU - Snead, L. L.

AU - Hasegawa, Akira

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The microstructure of near-stoichiometric fiber SiC/SiC composites implanted with He and H ions was studied at implantation temperatures of 1000 and 1300°C. The average size of He bubbles in the CVI SiC matrix decreases with increasing concentration of implanted H ions. Moreover, the number density of He bubbles increases with increasing irradiation temperature and amount of implanted H. At the irradiation temperature of 1000°C, He bubbles were mainly formed at grain boundary within the matrix. On the other hand, He bubbles were formed both at grain boundaries and within grains at the irradiation temperature of 1300°C. The average size of He bubbles at grain boundaries was much larger than within the grain. The average size of He bubbles in the fiber was smaller than that in the matrix in all cases.

AB - The microstructure of near-stoichiometric fiber SiC/SiC composites implanted with He and H ions was studied at implantation temperatures of 1000 and 1300°C. The average size of He bubbles in the CVI SiC matrix decreases with increasing concentration of implanted H ions. Moreover, the number density of He bubbles increases with increasing irradiation temperature and amount of implanted H. At the irradiation temperature of 1000°C, He bubbles were mainly formed at grain boundary within the matrix. On the other hand, He bubbles were formed both at grain boundaries and within grains at the irradiation temperature of 1300°C. The average size of He bubbles at grain boundaries was much larger than within the grain. The average size of He bubbles in the fiber was smaller than that in the matrix in all cases.

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VL - 335

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EP - 514

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

SN - 0022-3115

IS - 3

ER -

Synergistic effects of implanted helium and hydrogen and the effect of irradiation temperature on the microstructure of SiC/SiC composites

Abstract

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