Synchrotron radiation photoelectron spectroscopy of metal gate / HfSiO(N) /SiO(N) / Si stack structures

M. Oshima, S. Toyoda, H. Kamada, T. Tanimura, Y. Nakamura, K. Horiba, H. Kumigashira

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In order to meet strong demands for precise analysis in metal gate/high-k dielectrics stack structures, we have developed high resolution photoelectron spectroscopy techniques using synchrotron radiation. We have succeeded in analyzing precise chemical-state-resolved in-depth profiles of gate electrode/dielectric multilayer/ Si structures from both front and back sides by angle-resolved photoelectron spectroscopy and maximum entropy method. Furthermore, pin-point nano-scale indepth analysis using scanning photoelectron microscopy with sub 100 nm SR beam revealed the local formation of the intermixed region having suicide. Finally, non-destructive defect analysis using irradiation time-dependent photoelectron spectroscopy enabled us to analyze trapped charge and fixed charge.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
PublisherElectrochemical Society Inc.
Pages231-240
Number of pages10
Edition3
ISBN (Electronic)9781607681724
ISBN (Print)9781566778220
DOIs
Publication statusPublished - 2010
Externally publishedYes

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)

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