Synchrotron radiation photoelectron spectroscopy of metal gate / HfSiO(N) /SiO(N) / Si stack structures

M. Oshima, S. Toyoda, H. Kamada, T. Tanimura, Y. Nakamura, K. Horiba, H. Kumigashira

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In order to meet strong demands for precise analysis in metal gate/high-k dielectrics stack structures, we have developed high resolution photoelectron spectroscopy techniques using synchrotron radiation. We have succeeded in analyzing precise chemical-state-resolved in-depth profiles of gate electrode/dielectric multilayer/ Si structures from both front and back sides by angle-resolved photoelectron spectroscopy and maximum entropy method. Furthermore, pin-point nano-scale indepth analysis using scanning photoelectron microscopy with sub 100 nm SR beam revealed the local formation of the intermixed region having suicide. Finally, non-destructive defect analysis using irradiation time-dependent photoelectron spectroscopy enabled us to analyze trapped charge and fixed charge.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
Pages231-240
Number of pages10
Edition3
DOIs
Publication statusPublished - 2010 Dec 1
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 112010 Oct 15

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1110/10/15

ASJC Scopus subject areas

  • Engineering(all)

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    Oshima, M., Toyoda, S., Kamada, H., Tanimura, T., Nakamura, Y., Horiba, K., & Kumigashira, H. (2010). Synchrotron radiation photoelectron spectroscopy of metal gate / HfSiO(N) /SiO(N) / Si stack structures. In Physics and Technology of High-k Materials 8 (3 ed., pp. 231-240). (ECS Transactions; Vol. 33, No. 3). https://doi.org/10.1149/1.3481610