Synchrotron radiation nano-spectroscopy of dielectrics for LSI and ReRAM

Masaharu Oshima, Satoshi Toyoda, Koji Horiba, Ryutaro Yasuhara, Hiroshi Kumigashira

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal/high-k gate dielectrics stack structures for LSIs and metal/transition-metal-oxides (TMO)/metal structures for resistance random access memory (ReRAM) have been analyzed using synchrotron radiation nano-spectroscopy from the viewpoint of interfacial chemical and electronic states. We have developed a scanning photoelectron microscope (SPEM) with an angle-resolved electron analyzer and succeeded in obtaining chemical-state- resolved images and pin-point in-depth profiles of LSI gate patterns with 70 nm lateral resolution. For ReRAM, chemical-state-resolved images of Cu for a planar-type Pt/CuO/Pt resistance switching (RS) device revealed conductive filaments in TMO using photoelectron emission microscope (PEEM). Furthermore, in and out diffusion phenomena of oxygen corresponding to bias polarity for RS were observed for Pt/TaO x/Pt switching devices. Interfacial redox reactions which are common to all ReRAM devices are also observed for Al/TMO interfaces.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 9
Pages453-460
Number of pages8
Edition3
DOIs
Publication statusPublished - 2011 Dec 1
Event9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 102011 Oct 12

Publication series

NameECS Transactions
Number3
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/1011/10/12

ASJC Scopus subject areas

  • Engineering(all)

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    Oshima, M., Toyoda, S., Horiba, K., Yasuhara, R., & Kumigashira, H. (2011). Synchrotron radiation nano-spectroscopy of dielectrics for LSI and ReRAM. In Physics and Technology of High-k Materials 9 (3 ed., pp. 453-460). (ECS Transactions; Vol. 41, No. 3). https://doi.org/10.1149/1.3633061