Synchrotron-radiation-induced reactions of tetraethoxysilane on Si studied by photoemission spectroscopy

Michio Niwano, John K. Simons, Sean P. Frigo, Richard A. Rosenberg

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The synchrotron-radiation (SR)-induced chemical reactions of tetraethoxysilane Si(OC2H5)4 (TEOS) adsorbed on Si has been studied using photoemission spectroscopy. It is demonstrated that TEOS adsorbs intact on the Si surface below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon-oxide-like film on the Si surface, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the presence of water reduces the carbon contamination.

Original languageEnglish
Pages (from-to)7304-7309
Number of pages6
JournalJournal of Applied Physics
Issue number11
Publication statusPublished - 1994 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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