Synchrotron-radiation-induced reactions of tetraethoxysilane on Si studied by photoemission spectroscopy

Michio Niwano; John K. Simons; Sean P. Frigo; Richard A. Rosenberg

doi:10.1063/1.356640

Synchrotron-radiation-induced reactions of tetraethoxysilane on Si studied by photoemission spectroscopy

Michio Niwano, John K. Simons, Sean P. Frigo, Richard A. Rosenberg

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Abstract

The synchrotron-radiation (SR)-induced chemical reactions of tetraethoxysilane Si(OC₂H₅)₄ (TEOS) adsorbed on Si has been studied using photoemission spectroscopy. It is demonstrated that TEOS adsorbs intact on the Si surface below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon-oxide-like film on the Si surface, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the presence of water reduces the carbon contamination.

Original language	English
Pages (from-to)	7304-7309
Number of pages	6
Journal	Journal of Applied Physics
Volume	75
Issue number	11
DOIs	https://doi.org/10.1063/1.356640
Publication status	Published - 1994 Dec 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Synchrotron-radiation-induced reactions of tetraethoxysilane on Si studied by photoemission spectroscopy",

abstract = "The synchrotron-radiation (SR)-induced chemical reactions of tetraethoxysilane Si(OC2H5)4 (TEOS) adsorbed on Si has been studied using photoemission spectroscopy. It is demonstrated that TEOS adsorbs intact on the Si surface below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon-oxide-like film on the Si surface, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the presence of water reduces the carbon contamination.",

author = "Michio Niwano and Simons, {John K.} and Frigo, {Sean P.} and Rosenberg, {Richard A.}",

year = "1994",

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AU - Niwano, Michio

AU - Simons, John K.

AU - Frigo, Sean P.

AU - Rosenberg, Richard A.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The synchrotron-radiation (SR)-induced chemical reactions of tetraethoxysilane Si(OC2H5)4 (TEOS) adsorbed on Si has been studied using photoemission spectroscopy. It is demonstrated that TEOS adsorbs intact on the Si surface below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon-oxide-like film on the Si surface, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the presence of water reduces the carbon contamination.

AB - The synchrotron-radiation (SR)-induced chemical reactions of tetraethoxysilane Si(OC2H5)4 (TEOS) adsorbed on Si has been studied using photoemission spectroscopy. It is demonstrated that TEOS adsorbs intact on the Si surface below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon-oxide-like film on the Si surface, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the presence of water reduces the carbon contamination.

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JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -

Synchrotron-radiation-induced reactions of tetraethoxysilane on Si studied by photoemission spectroscopy

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