Synchrotron radiation induced reactions of a condensed layer of silicon alkoxide on Si

Koji Kinashi, Michio Niwano, Jun Ichi Sawahata, Fumikazu Shimoshikiryo, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The authors have investigated the synchrotron radiation (SR) induced chemical reactions of condensed layers of silicon alkoxides, tetramethoxysilane Si(OCH3)4 and tetraethoxysilane Si(OC2H5)4, adsorbed on a Si substrate at 80 K. Photon stimulated desorption measurements show that irradiation with SR in the vacuum-ultraviolet region induces the desorption of hydrogen, hydrocarbon, and carbon monoxide from the condensed layer, indicating that the radiation decomposes the alkoxyl group in the silicon alkoxides. Infrared absorption and photoemission data demonstrate that Si-containing fragments produced by the decomposition of silicon alkoxide molecules are polymerized to form silicon oxide. The experimental results show the possibility of deposition silicon oxide film from silicon alkoxides using intense SR in the VUV region.

Original languageEnglish
Pages (from-to)1879-1884
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
Publication statusPublished - 1995 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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