Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

H. Fujioka, T. Sekiya, Y. Kuzuoka, M. Oshima, H. Usuda, N. Hirashita, M. Niwa

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Synchrotron-radiation deep level transient spectroscopy (SR-DLTS) technique was developed to investigate the electrical properties and the origin of defects in the metal/insulator Si heterostructures. Two hole traps, HT1 and HT2, with activation energies of 0.074 and 0.84 eV, respectively were detected in the AlN/AlN/Si heterostructures. The epitaxial growth by pulsed laser deposition (PLD) technique of AlN films was observed using reflection high energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (XTEM) methods. The results show that HT1 consists of continuous levels above the valence band whereas HT2 is a discrete level in the AlN films.

Original languageEnglish
Pages (from-to)413-415
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number3
DOIs
Publication statusPublished - 2004 Jul 19
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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