Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

H. Fujioka; T. Sekiya; Y. Kuzuoka; M. Oshima; H. Usuda; N. Hirashita; M. Niwa

doi:10.1063/1.1775032

Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

H. Fujioka, T. Sekiya, Y. Kuzuoka, M. Oshima, H. Usuda, N. Hirashita, M. Niwa

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Synchrotron-radiation deep level transient spectroscopy (SR-DLTS) technique was developed to investigate the electrical properties and the origin of defects in the metal/insulator Si heterostructures. Two hole traps, HT1 and HT2, with activation energies of 0.074 and 0.84 eV, respectively were detected in the AlN/AlN/Si heterostructures. The epitaxial growth by pulsed laser deposition (PLD) technique of AlN films was observed using reflection high energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (XTEM) methods. The results show that HT1 consists of continuous levels above the valence band whereas HT2 is a discrete level in the AlN films.

Original language	English
Pages (from-to)	413-415
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	3
DOIs	https://doi.org/10.1063/1.1775032
Publication status	Published - 2004 Jul 19
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors",

abstract = "Synchrotron-radiation deep level transient spectroscopy (SR-DLTS) technique was developed to investigate the electrical properties and the origin of defects in the metal/insulator Si heterostructures. Two hole traps, HT1 and HT2, with activation energies of 0.074 and 0.84 eV, respectively were detected in the AlN/AlN/Si heterostructures. The epitaxial growth by pulsed laser deposition (PLD) technique of AlN films was observed using reflection high energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (XTEM) methods. The results show that HT1 consists of continuous levels above the valence band whereas HT2 is a discrete level in the AlN films.",

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T1 - Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

AU - Fujioka, H.

AU - Sekiya, T.

AU - Kuzuoka, Y.

AU - Oshima, M.

AU - Usuda, H.

AU - Hirashita, N.

AU - Niwa, M.

PY - 2004/7/19

Y1 - 2004/7/19

N2 - Synchrotron-radiation deep level transient spectroscopy (SR-DLTS) technique was developed to investigate the electrical properties and the origin of defects in the metal/insulator Si heterostructures. Two hole traps, HT1 and HT2, with activation energies of 0.074 and 0.84 eV, respectively were detected in the AlN/AlN/Si heterostructures. The epitaxial growth by pulsed laser deposition (PLD) technique of AlN films was observed using reflection high energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (XTEM) methods. The results show that HT1 consists of continuous levels above the valence band whereas HT2 is a discrete level in the AlN films.

AB - Synchrotron-radiation deep level transient spectroscopy (SR-DLTS) technique was developed to investigate the electrical properties and the origin of defects in the metal/insulator Si heterostructures. Two hole traps, HT1 and HT2, with activation energies of 0.074 and 0.84 eV, respectively were detected in the AlN/AlN/Si heterostructures. The epitaxial growth by pulsed laser deposition (PLD) technique of AlN films was observed using reflection high energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (XTEM) methods. The results show that HT1 consists of continuous levels above the valence band whereas HT2 is a discrete level in the AlN films.

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Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

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