Synchrotron-radiation deep level transient spectroscopy (SR-DLTS) technique was developed to investigate the electrical properties and the origin of defects in the metal/insulator Si heterostructures. Two hole traps, HT1 and HT2, with activation energies of 0.074 and 0.84 eV, respectively were detected in the AlN/AlN/Si heterostructures. The epitaxial growth by pulsed laser deposition (PLD) technique of AlN films was observed using reflection high energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (XTEM) methods. The results show that HT1 consists of continuous levels above the valence band whereas HT2 is a discrete level in the AlN films.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)