Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions

X. F. Han, S. F. Zhao, F. F. Li, T. Daibou, H. Kubota, Y. Ando, T. Miyazaki

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

Double barrier magnetic tunnel junctions (DBMTJs) with the layer structures of Ta (5 nm)/Ni79Fe21 (40 nm)/Ir22Mn 78 (10 nm)/Co75Fe25 (4 nm)/Al (1 nm)-oxide/Co75Fe25 (8 nm)/Al (1 nm)-oxide/Co 75Fe25 (4 nm)/Ir22Mn78 (10 nm)/Ni79Fe21 (30 nm)/Ta (5 nm) on Si/SiO2 wafer were micro-fabricated using a TMR R&D magnetron sputtering system and lithography method. TMR ratios of 30.0% and 22.1%, resistance-area product RS of around 32.0 and 27.5 kΩμm2, and free layer coercivity of 201 and 141 Oe at 4.2 K and room temperature (RT), respectively, were obtained for the MTJs with a size of 80×80 μm2. Static and dynamic domain structures occur as the DC current increases and magnetization switching properties are simulated based on micromagnetics using the energy minimization method. TMR ratios in DBMTJs that are far lower than the expected theoretical values can be clarified based on micromagnetics simulations due to the vortex domain structures formed in the free layer.

Original languageEnglish
Pages (from-to)225-231
Number of pages7
JournalJournal of Magnetism and Magnetic Materials
Volume282
Issue number1-3
DOIs
Publication statusPublished - 2004 Nov
EventInternational Symposium on Advanced Magnetic Technologies - Taipei, Taiwan, Province of China
Duration: 2003 Nov 132003 Nov 16

Keywords

  • Domain structure
  • Double barrier magnetic tunnelling junction
  • Magnetization switching
  • Micromagnetic simulation
  • TMR

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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