Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions

M. Fukuda; M. Yamanouchi; F. Matsukura; H. Ohno

doi:10.1063/1.2767230

Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions

M. Fukuda, M. Yamanouchi, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Switching of tunnel magnetoresistance in magnetic tunnel junctions (MTJs) has been achieved by magnetic domain wall motion in one of the electrodes. The fabricated devices have two (Ga,Mn)As-based MTJs with a common bottom (Ga,Mn)As electrode, in which the domain wall motion takes place both by magnetic field and by current. This configuration allows not only the observation of switching but also time-resolved detection of the position of the domain wall by the tunnel magnetoresistance.

Original language	English
Article number	052503
Journal	Applied Physics Letters
Volume	91
Issue number	5
DOIs	https://doi.org/10.1063/1.2767230
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2767230

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title = "Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions",

abstract = "Switching of tunnel magnetoresistance in magnetic tunnel junctions (MTJs) has been achieved by magnetic domain wall motion in one of the electrodes. The fabricated devices have two (Ga,Mn)As-based MTJs with a common bottom (Ga,Mn)As electrode, in which the domain wall motion takes place both by magnetic field and by current. This configuration allows not only the observation of switching but also time-resolved detection of the position of the domain wall by the tunnel magnetoresistance.",

author = "M. Fukuda and M. Yamanouchi and F. Matsukura and H. Ohno",

note = "Funding Information: The authors thank D. Chiba and T. Kita for discussion. This work was supported in part by the IT program of RR2002 from MEXT.",

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language = "English",

volume = "91",

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T1 - Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions

AU - Fukuda, M.

AU - Yamanouchi, M.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The authors thank D. Chiba and T. Kita for discussion. This work was supported in part by the IT program of RR2002 from MEXT.

PY - 2007

Y1 - 2007

N2 - Switching of tunnel magnetoresistance in magnetic tunnel junctions (MTJs) has been achieved by magnetic domain wall motion in one of the electrodes. The fabricated devices have two (Ga,Mn)As-based MTJs with a common bottom (Ga,Mn)As electrode, in which the domain wall motion takes place both by magnetic field and by current. This configuration allows not only the observation of switching but also time-resolved detection of the position of the domain wall by the tunnel magnetoresistance.

AB - Switching of tunnel magnetoresistance in magnetic tunnel junctions (MTJs) has been achieved by magnetic domain wall motion in one of the electrodes. The fabricated devices have two (Ga,Mn)As-based MTJs with a common bottom (Ga,Mn)As electrode, in which the domain wall motion takes place both by magnetic field and by current. This configuration allows not only the observation of switching but also time-resolved detection of the position of the domain wall by the tunnel magnetoresistance.

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SN - 0003-6951

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ER -

Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions

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